P-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP4433GH-HF
Halogen-Free Product
Advanced Power Electronics Corp.
▼ Lower Gate Charge ▼ Simple Drive Requirement ▼ Fast...
Description
AP4433GH-HF
Halogen-Free Product
Advanced Power Electronics Corp.
▼ Lower Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free G
P-CHANNEL ENHANCEMENT MODE POWER MOSFET D
BVDSS RDS(ON) ID
-30V 30mΩ -21.5A
S
Description
AP4433 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-252 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance.
G D S
TO-252(H)
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
1
Rating -30 +20 -21.5 -13.6 -80 20.8 2 -55 to 150 -55 to 150
Units V V A A A W W ℃ ℃
Total Power Dissipation Total Power Dissipation
3
Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)
3
Value 6 62.5
Units ℃/W ℃/W 1 201211281
Data and specifications subject to change without notice
Free Datasheet http://www.datasheet4u.com/
AP443...
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