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STP11NM60FP. P11NM60FP Datasheet

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STP11NM60FP. P11NM60FP Datasheet






P11NM60FP STP11NM60FP. Datasheet pdf. Equivalent




P11NM60FP STP11NM60FP. Datasheet pdf. Equivalent





Part

P11NM60FP

Description

STP11NM60FP



Feature


STP11NM60 - STP11NM60FP STB11NM60 - STB1 1NM60-1 N-CHANNEL 600V - 0.4Ω-11A TO- 220/TO-220FP/D2PAK/I2PAK MDmesh™Power MOSFET TYPE STP11NM60 STP11NM60FP STB1 1NM60 STB11NM60-1 VDSS 600 V 600 V 600 V 600 V RDS(on) < 0.45 < 0.45 < 0.45 < 0.45 Ω Ω Ω Ω ID 11 A 11 A 11 A 11 A 1 2 3 1 3 2 TYPICAL RDS(on) = 0 .4Ω HIGH dv/dt AND AVALANCHE CAPABILI TIES 100% AVALANCHE TESTED LOW I.
Manufacture

STMicroelectronics

Datasheet
Download P11NM60FP Datasheet


STMicroelectronics P11NM60FP

P11NM60FP; NPUT CAPACITANCE AND GATE CHARGE LOW GAT E INPUT RESISTANCE DESCRIPTION The MDme sh™ is a new revolutionary MOSFET tec hnology that associates the Multiple Dr ain process with the Company’s PowerM ESH™ horizontal layout. The resulting product has an outstanding low on-resi stance, impressively high dv/dt and exc ellent avalanche characteristics. The a doption of the Company’s.


STMicroelectronics P11NM60FP

proprietary strip technique yields over all dynamic performance that is signifi cantly better than that of similar comp etition’s products. APPLICATIONS The MDmesh™ family is very suitable for i ncreasing power density of high voltage converters allowing system miniaturiza tion and higher efficiencies. ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM ( ) PTOT dv/dt(.


STMicroelectronics P11NM60FP

1) VISO Tstg Tj May 2003 Parameter Drain -source Voltage (VGS = 0) Drain-gate Vo ltage (RGS = 20 kΩ) Gate- source Volt age Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total D issipation at TC = 25°C Derating Facto r Peak Diode Recovery voltage slope Ins ulation Winthstand Voltage (DC) Storage Temperature Max. Opera.

Part

P11NM60FP

Description

STP11NM60FP



Feature


STP11NM60 - STP11NM60FP STB11NM60 - STB1 1NM60-1 N-CHANNEL 600V - 0.4Ω-11A TO- 220/TO-220FP/D2PAK/I2PAK MDmesh™Power MOSFET TYPE STP11NM60 STP11NM60FP STB1 1NM60 STB11NM60-1 VDSS 600 V 600 V 600 V 600 V RDS(on) < 0.45 < 0.45 < 0.45 < 0.45 Ω Ω Ω Ω ID 11 A 11 A 11 A 11 A 1 2 3 1 3 2 TYPICAL RDS(on) = 0 .4Ω HIGH dv/dt AND AVALANCHE CAPABILI TIES 100% AVALANCHE TESTED LOW I.
Manufacture

STMicroelectronics

Datasheet
Download P11NM60FP Datasheet




 P11NM60FP
STP11NM60 - STP11NM60FP
STB11NM60 - STB11NM60-1
N-CHANNEL 600V - 0.4-11A TO-220/TO-220FP/D2PAK/I2PAK
MDmesh™Power MOSFET
TYPE
VDSS
RDS(on)
ID
STP11NM60
STP11NM60FP
STB11NM60
STB11NM60-1
600 V
600 V
600 V
600 V
< 0.45
< 0.45
< 0.45
< 0.45
11 A
11 A
11 A
11 A
TYPICAL RDS(on) = 0.4
HIGH dv/dt AND AVALANCHE CAPABILITIES
100% AVALANCHE TESTED
LOW INPUT CAPACITANCE AND GATE
CHARGE
LOW GATE INPUT RESISTANCE
DESCRIPTION
The MDmesh™ is a new revolutionary MOSFET
technology that associates the Multiple Drain pro-
cess with the Company’s PowerMESH™ horizontal
layout. The resulting product has an outstanding low
on-resistance, impressively high dv/dt and excellent
avalanche characteristics. The adoption of the
Company’s proprietary strip technique yields overall
dynamic performance that is significantly better than
that of similar competition’s products.
APPLICATIONS
The MDmesh™ family is very suitable for increasing
power density of high voltage converters allowing
system miniaturization and higher efficiencies.
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM ( ) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
VISO
Insulation Winthstand Voltage (DC)
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
May 2003
3
2
1
TO-220
3
2
1
TO-220FP
3
1
D2PAK
123
I2PAK
INTERNAL SCHEMATIC DIAGRAM
Value
STP(B)11NM60(-1)
STP11NM60FP
600
600
±30
11 11 (*)
7 7 (*)
44 44 (*)
160 35
1.28
0.28
15
-- 2500
–65 to 150
150
(*)Limited only by maximum temperature allowed
(1)ISD<11A, di/dt<400A/µs, VDD<V(BR)DSS, TJ<TJMAX
Unit
V
V
V
A
A
A
W
W/°C
V/ns
V
°C
°C
1/12
Free Datasheet http://www.datasheet4u.com/




 P11NM60FP
STP11NM60 / STP11NM60FP / STB11NM60 / STB11NM60-1
THERMAL DATA
Rthj-case
Rthj-amb
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Maximum Lead Temperature For Soldering Purpose
TO-220/D2PAK/I2PAK
0.78
62.5
300
TO-220FP
3.57
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Max Value
5.5
350
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max.
V(BR)DSS Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
600
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
10
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ±30V
±100
°C/W
°C/W
°C
Unit
A
mJ
Unit
V
µA
µA
nA
ON (1)
Symbol
VGS(th)
RDS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
VDS = VGS, ID = 250µA
VGS = 10V, ID = 5.5A
Min.
3
Typ.
4
0.4
Max.
5
0.45
Unit
V
DYNAMIC
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
gfs (1)
Forward Transconductance
VDS > ID(on) x RDS(on)max,
ID = 5.5A
5.2 S
Ciss Input Capacitance
VDS = 25V, f = 1 MHz, VGS = 0
1000
pF
Coss
Output Capacitance
230 pF
Crss Reverse Transfer
Capacitance
25 pF
Coss eq. (2) Equivalent Output
Capacitance
VGS = 0V, VDS = 0V to 480V
100 pF
RG Gate Input Resistance
f=1 MHz Gate DC Bias = 0
Test Signal Level = 20mV
Open Drain
1.6
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%
VDSS.
2/12
Free Datasheet http://www.datasheet4u.com/




 P11NM60FP
STP11NM60 / STP11NM60FP / STB11NM60 / STB11NM60-1
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
Parameter
Test Conditions
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 300V, ID = 5.5A
RG = 4.7VGS = 10V
(see test circuit, Figure 3)
Qg Total Gate Charge
Qgs Gate-Source Charge
VDD = 400V, ID = 11A,
VGS = 10V
Qgd Gate-Drain Charge
SWITCHING OFF
Symbol
Parameter
tr(Voff)
Off-voltage Rise Time
tf Fall Time
tc Cross-over Time
Test Conditions
VDD = 400V, ID = 11A,
RG = 4.7Ω, VGS = 10V
(see test circuit, Figure 5)
Min.
Typ.
20
20
30
10
15
Max.
Unit
ns
ns
nC
nC
nC
Min.
Typ.
6
11
19
Max.
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min. Typ. Max.
ISD Source-drain Current
11
ISDM (2) Source-drain Current (pulsed)
44
VSD (1) Forward On Voltage
ISD = 11A, VGS = 0
1.5
trr Reverse Recovery Time
ISD = 11A, di/dt = 100A/µs,
Qrr
Reverse Recovery Charge
VDD = 100 V, Tj = 25°C
Irrm Reverse Recovery Current (see test circuit, Figure 5)
390
3.8
19.5
trr Reverse Recovery Time
ISD = 11A, di/dt = 100A/µs,
Qrr
Reverse Recovery Charge
VDD = 100 V, Tj = 150°C
Irrm Reverse Recovery Current (see test circuit, Figure 5)
570
5.7
20
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Safe Operating Area for TO-220/D2PAK/I2PAK
Safe Operating Area for TO-220FP
Unit
A
A
V
ns
µC
A
ns
µC
A
3/12
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