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N-Channel MOSFET. FDA59N30 Datasheet

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N-Channel MOSFET. FDA59N30 Datasheet






FDA59N30 MOSFET. Datasheet pdf. Equivalent




FDA59N30 MOSFET. Datasheet pdf. Equivalent





Part

FDA59N30

Description

300V N-Channel MOSFET



Feature


FDA59N30 300V N-Channel MOSFET UniFET F DA59N30 300V N-Channel MOSFET Features • 59A, 300V, RDS(on) = 0.056Ω @VGS = 10 V • Low gate charge ( typical 77 nC) • Low Crss ( typical 80 pF) • Fast switching • 100% avalanche teste d • Improved dv/dt capability TM De scription These N-Channel enhancement m ode power field effect transistors are produced using Fairchild’s propr.
Manufacture

Fairchild Semiconductor

Datasheet
Download FDA59N30 Datasheet


Fairchild Semiconductor FDA59N30

FDA59N30; ietary, planar stripe, DMOS technology. This advanced technology has been espec ially tailored to minimize on-state res istance, provide superior switching per formance, and withstand high energy pul se in the avalanche and commutation mod e. These devices are well suited for hi gh efficient switched mode power suppli es and active power factor correction. D ! " G! ! " " .


Fairchild Semiconductor FDA59N30

" TO-3P G DS FDA Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGS S EAS IAR EAR dv/dt PD TJ, TSTG TL Drai n-Source Voltage Drain Current Drain Cu rrent Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Rep etitive Avalanche Energy Peak Diode Rec overy dv/dt Power Dissipation (TC = 25 C) - Derate above 25°C (Note 2) (Note 1) (Note 1) (Note 3.


Fairchild Semiconductor FDA59N30

) Parameter - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed (Not e 1) FDA59N30 300 59 35 236 ±30 1734 59 50 4.5 500 4 -55 to +150 300 Unit V A A A V mJ A mJ V/ns W W/°C °C °C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Second s Thermal Characteristics Symbol RθJC RθCS RθJA Parameter Therm.

Part

FDA59N30

Description

300V N-Channel MOSFET



Feature


FDA59N30 300V N-Channel MOSFET UniFET F DA59N30 300V N-Channel MOSFET Features • 59A, 300V, RDS(on) = 0.056Ω @VGS = 10 V • Low gate charge ( typical 77 nC) • Low Crss ( typical 80 pF) • Fast switching • 100% avalanche teste d • Improved dv/dt capability TM De scription These N-Channel enhancement m ode power field effect transistors are produced using Fairchild’s propr.
Manufacture

Fairchild Semiconductor

Datasheet
Download FDA59N30 Datasheet




 FDA59N30
FDA59N30
300V N-Channel MOSFET
Features
• 59A, 300V, RDS(on) = 0.056@VGS = 10 V
• Low gate charge ( typical 77 nC)
• Low Crss ( typical 80 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
UniFET TM
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
cient switched mode power supplies and active power factor
correction.
G DS
TO-3P
FDA Series
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
(Note 1)
Gate-Source voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation
(TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
D
!
"
!"
G!
"
"
!
S
FDA59N30
300
59
35
236
±30
1734
59
50
4.5
500
4
-55 to +150
300
Min.
--
0.24
--
Max.
0.25
--
40
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
°C/W
°C/W
©2005 Fairchild Semiconductor Corporation
FDA59N30 Rev. A
1
www.fairchildsemi.com
Free Datasheet http://www.datasheet.in/




 FDA59N30
Package Marking and Ordering Information
Device Marking
FDA59N30
Device
FDA59N30
Package
TO-3P
Reel Size
-
Tape Width
-
Quantity
30
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Conditions
Min.
Off Characteristics
BVDSS
BVDSS
/ TJ
IDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS Forward Transconductance
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VGS = 0V, ID = 250µA
ID = 250µA, Referenced to 25°C
VDS = 300V, VGS = 0V
VDS = 240V, TC = 125°C
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
300
--
--
--
--
--
VDS = VGS, ID = 250µA
VGS = 10V, ID = 29.5A
VDS = 40V, ID = 29.5A
3.0
--
(Note 4)
--
VDS = 25V, VGS = 0V,
f = 1.0MHz
--
--
--
VDD = 150V, ID = 59A
RG = 25
VDS = 240V, ID = 59A
VGS = 10V
(Note 4, 5)
(Note 4, 5)
--
--
--
--
--
--
--
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 59A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0V, IS = 59A
dIF/dt =100A/µs
(Note 4)
--
--
--
--
--
Typ.
--
0.3
--
--
--
--
--
0.047
52
3590
710
80
140
575
120
200
77
22
40
--
--
--
246
6.9
Max Units
--
--
1
10
100
-100
V
V/°C
µA
µA
nA
nA
5.0
0.056
--
V
S
4670
920
120
pF
pF
pF
290
1160
250
410
100
--
--
ns
ns
ns
ns
nC
nC
nC
59 A
236 A
1.4 V
-- ns
-- µC
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 0.83mH, IAS = 59A, VDD = 50V, RG = 25, Starting TJ = 25°C
3. ISD 59A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width 300µs, Duty Cycle 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
FDA59N30 Rev. A
2 www.fairchildsemi.com
Free Datasheet http://www.datasheet.in/




 FDA59N30
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Top :
VGS
15.0 V
102
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
101
100
10-1
Notes :
1. 250µ s Pulse Test
2. TC = 25
100 101
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
0.12
0.11
0.10
0.09
0.08
0.07
0.06
0.05
0.04
0
VGS = 10V
VGS = 20V
Note : TJ = 25
25 50 75 100 125 150 175
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
9000
6000
Coss
Ciss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
3000
0
10-1
Note ;
Crss
1. VGS = 0 V
2. f = 1 MHz
100 101
VDS, Drain-Source Voltage [V]
Figure 2. Transfer Characteristics
102
101
100
2
150oC
25oC
-55oC
Notes :
1. VDS = 40V
2. 250µ s Pulse Test
4 6 8 10
VGS, Gate-Source Voltage [V]
12
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
102
101 150
25
Notes :
1. VGS = 0V
2. 250µ s Pulse Test
100
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
VSD, Source-Drain voltage [V]
Figure 6. Gate Charge Characteristics
12
10 VDS = 60V
VDS = 150V
8 VDS = 240V
6
4
2
Note : ID = 59A
0
0 10 20 30 40 50 60 70 80
QG, Total Gate Charge [nC]
FDA59N30 Rev. A
3 www.fairchildsemi.com
Free Datasheet http://www.datasheet.in/






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