K4115

2SK4115 www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π- MOSⅣ) 2SK4115 Switching Regulator Applications Low drain-source ON resistance: RDS (ON) = 1.6 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 5.0 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 720 V) 3.3max. 2.0 9.0 20.0±0.3 2.0 Ф3.2±0.2 1.0 4.5 Unit: mm 15.9max. Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 900 900 ±30 7 21 150 491 7 15 150 −55~150 Unit V 1.8max. 1.0 －0.25 ＋0.3 5.45±0.2 0.6－0.1 ＋0.3 5.45±0.2 4.8max. 1 2 3 2.8 V V A W mJ A mJ °C °C Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range 1. GATE 2. DRAIN (HEATSINK) 3. SOURCE JEDEC JEITA TOSHIBA ― SC-65 2−16C1B Weight: 4.6 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Han...