N-Channel MOSFET 500V
MDF12N50 N-channel MOSFET 500V
MDF12N50
N-Channel MOSFET 500V, 11.5 A, 0.65Ω
General Description
The MDF12N50 uses adva...
Description
MDF12N50 N-channel MOSFET 500V
MDF12N50
N-Channel MOSFET 500V, 11.5 A, 0.65Ω
General Description
The MDF12N50 uses advanced MagnaChip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDF12N50 is suitable device for SMPS, high Speed switching and general purpose applications.
Features
VDS = 500V ID = 11.5A RDS(ON) ≤ 0.65Ω @ VGS = 10V @ VGS = 10V
Applications
Power Supply PFC High Current, High Speed Switching
D
G
G
D
S
S
Absolute Maximum Ratings (Ta = 25oC)
Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (※) Pulsed Drain Current Power Dissipation Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy
(4) (1)
Symbol VDSS VGSS TC=25 C TC=100 C
o o
Rating 500 ±30 11.5 7.0 46 42 0.32 4.5 460 -55~150
Unit V V A A A W W/ oC V/ns mJ
o
ID IDM
TC=25oC Derate above 25 oC
PD Dv/dt EAS TJ, Tstg
Junction and Storage Temperature Range ※ Id limited by maximum junction temperature
C
Thermal Characteristics
Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(1) (1)
Symbol RθJA RθJC
Rating 62.5 3.0
Unit
o
C/W
Dec 2009. Version 1.2
1 MagnaChip Semiconductor Ltd.
Free Datasheet http://www.datasheet4u.com/
MDF12N50 N-channel MOSFET 500V
Ordering Information
Part Number MDF12N50TH Temp. Range -55~150oC Package TO-220F Packing Tube RoHS Status Halogen Free
Electrical Characteristics (Ta =25oC)
Characteristics Static Characteristics ...
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