Power Transistors
2SB1416
Silicon PNP epitaxial planar type
For low-frequency power amplification Complementary to 2SD2...
Power
Transistors
2SB1416
Silicon
PNP epitaxial planar type
For low-frequency power amplification Complementary to 2SD2136
3.8±0.2
Unit: mm
7.5±0.2 4.5±0.2
■ Features
High forward current transfer ratio hFE which has satisfactory linearity Low collector-emitter saturation voltage VCE(sat) Allowing automatic insertion with radial taping
10.8±0.2
0.65±0.1 2.5±0.1
0.85±0.1 1.0±0.1 0.8 C
90˚
0.8 C
16.0±1.0
0.7±0.1 0.7±0.1 1.15±0.2 1.15±0.2
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating −60 −60 −5 −3 −5 1.5 150 −55 to +150 Unit V V V A A W °C °C
2.5±0.2 0.8 C 1 2 3 0.5±0.1 2.05±0.2 0.4±0.1
2.5±0.2
1: Emitter 2: Collector 3: Base MT-3-A1 Package
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Collector-emitter voltage (Base open) Base-emitter voltage Collector-emitter cutoff current (E-B short) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Symbol VCEO VBE ICES ICEO IEBO hFE1 * hFE2 Collector-emitter saturation voltage Transition frequency Turn-on time Storage time Fall time VCE(sat) fT ton tstg tf Conditions IC = −30 mA, IB = 0 VCE = −4 V, IC = −3 A VCE = −60 V, VBE = 0 VCE = −30 V, IB = 0 VEB = −5 V, IC = 0 VCE = −...
