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B1412 Datasheet, Equivalent, 2SB1412.

2SB1412

2SB1412

 

 

 

Part B1412
Description 2SB1412
Feature Low frequency transistor (−20V,−5A) 2SB1412 zFeatures 1) Low VCE(sat).
VCE (sat) = −0.
35V (Typ.
) (IC/IB = −4A / −0.
1A) 2) Excellent DC current gain characteristics.
3) Complements the 2S D2118.
zStructure Epitaxial planar type PNP silicon transistor zDimensions (U nit : mm) 2SB1412 ROHM : CPT3 EIAJ : S C-63 ∗ Denotes hFE (1) Base (2) Coll ector (3) Emitter zAbsolute maximum ra tings (Ta=25°C) Parameter Symbol Li mits Collector-base voltage VCBO − 30 Collector-emitter voltage VCEO 20 Emitter-base voltage VEBO −6 Collector current −5 IC −10 Colle ctor power dissipation 2SB1412 PC .
Manufacture Rohm
Datasheet
Download B1412 Datasheet
Part B1412
Description 2SB1412
Feature Low frequency transistor (−20V,−5A) 2SB1412 zFeatures 1) Low VCE(sat).
VCE (sat) = −0.
35V (Typ.
) (IC/IB = −4A / −0.
1A) 2) Excellent DC current gain characteristics.
3) Complements the 2S D2118.
zStructure Epitaxial planar type PNP silicon transistor zDimensions (U nit : mm) 2SB1412 ROHM : CPT3 EIAJ : S C-63 ∗ Denotes hFE (1) Base (2) Coll ector (3) Emitter zAbsolute maximum ra tings (Ta=25°C) Parameter Symbol Li mits Collector-base voltage VCBO − 30 Collector-emitter voltage VCEO 20 Emitter-base voltage VEBO −6 Collector current −5 IC −10 Colle ctor power dissipation 2SB1412 PC .
Manufacture Rohm
Datasheet
Download B1412 Datasheet

B1412

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B1412

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