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2SC5793. C5793 Datasheet

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2SC5793. C5793 Datasheet






C5793 2SC5793. Datasheet pdf. Equivalent




C5793 2SC5793. Datasheet pdf. Equivalent





Part

C5793

Description

2SC5793



Feature


Ordering number : ENN7451 2SC5793 NPN T riple Diffused Planar Silicon Transisto r 2SC5793 Ultrahigh-Definition CRT Dis play Horizontal Deflection Output Appli cations Features • • • • Packa ge Dimensions unit : mm 2174A [2SC5793] 16.0 5.0 High speed. High breakdown v oltage(VCBO=1600V). High reliability(Ad option of HVP process). Adoption of MBI T process. 3.4 5.6 3.1 8.
Manufacture

Sanyo Semicon Device

Datasheet
Download C5793 Datasheet


Sanyo Semicon Device C5793

C5793; .0 22.0 21.0 4.0 2.8 2.0 20.4 0.7 0. 9 1 2 5.45 3 Specifications Absolut e Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to -Emitter Voltage Emitter-to-Base Voltag e Collector Current Collector Current ( Pulse) Collector Dissipation Junction T emperature Storage Temperature Symbol V CBO VCEO VEBO IC ICP PC Tj Tstg Tc=25° C Conditions 1 : Ba.


Sanyo Semicon Device C5793

se 2 : Collector 3 : Emitter SANYO : TO- 3PMLH Ratings 1600 800 5 20 40 3.0 95 1 50 --55 to +150 Unit V V V A A W W °C °C 5.45 Electrical Characteristics a t Ta=25°C Parameter Collector Cutoff C urrent Collector-to-Emitter Breakdown V oltage Emitter Cutoff Current Symbol IC BO ICES V(BR)CEO IEBO Conditions VCB=80 0V, IE=0 VCE=1600V, RBE=0 IC=10mA, RBE= ∞ VEB=4V, IC=0 Rating.


Sanyo Semicon Device C5793

s min typ max 10 1.0 800 1.0 Unit µA mA V mA 3.5 0.8 2.1 Continued on next page. Any and all SANYO products desc ribed or contained herein do not have s pecifications that can handle applicati ons that require extremely high levels of reliability, such as life-support sy stems, aircraft's control systems, or o ther applications whose failure can be reasonably expected.

Part

C5793

Description

2SC5793



Feature


Ordering number : ENN7451 2SC5793 NPN T riple Diffused Planar Silicon Transisto r 2SC5793 Ultrahigh-Definition CRT Dis play Horizontal Deflection Output Appli cations Features • • • • Packa ge Dimensions unit : mm 2174A [2SC5793] 16.0 5.0 High speed. High breakdown v oltage(VCBO=1600V). High reliability(Ad option of HVP process). Adoption of MBI T process. 3.4 5.6 3.1 8.
Manufacture

Sanyo Semicon Device

Datasheet
Download C5793 Datasheet




 C5793
Ordering number : ENN7451
2SC5793
NPN Triple Diffused Planar Silicon Transistor
2SC5793
Ultrahigh-Definition CRT Display
Horizontal Deflection Output Applications
Features
High speed.
High breakdown voltage(VCBO=1600V).
High reliability(Adoption of HVP process).
Adoption of MBIT process.
Package Dimensions
unit : mm
2174A
[2SC5793]
16.0 3.4
5.6
3.1
2.8
2.0 2.1
0.7 0.9
Specifications
Absolute Maximum Ratings at Ta=25°C
12 3
5.45
5.45
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PMLH
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Symbol
VCBO
VCEO
VEBO
IC
ICP
Collector Dissipation
PC
Junction Temperature
Storage Temperature
Tj
Tstg
Electrical Characteristics at Ta=25°C
Tc=25°C
Conditions
Ratings
1600
800
5
20
40
3.0
95
150
--55 to +150
Unit
V
V
V
A
A
W
W
°C
°C
Parameter
Collector Cutoff Current
Collector-to-Emitter Breakdown Voltage
Emitter Cutoff Current
Symbol
Conditions
ICBO
ICES
V(BR)CEO
IEBO
VCB=800V, IE=0
VCE=1600V, RBE=0
IC=10mA, RBE=
VEB=4V, IC=0
min
800
Ratings
typ
max
Unit
10 µA
1.0 mA
V
1.0 mA
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
31504 TS IM TA-100375 No.7451-1/4
Free Datasheet http:




 C5793
2SC5793
Continued from preceding page.
Parameter
DC Current Gain
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Storage Time
Fall Time
Symbol
hFE1
hFE2
VCE(sat)
VBE(sat)
tstg
tf
Conditions
VCE=5V, IC=1A
VCE=5V, IC=15A
IC=13.5A, IB=3.4A
IC=13.5A, IB=3.4A
IC=10A, IB1=1.6A, IB2=--5A
IC=10A, IB1=1.6A, IB2=--5A
Switching Time Test Circuit
PW=20µs
D.C.1%
INPUT
VR
IB1
IB2
RB
50
+
100µF
VBE= --5V
OUTPUT
RL=
20
+
470µF
VCC=200V
min
10
4
Ratings
typ
max
7
3
1.5
3.0
0.2
Unit
V
V
µs
µs
16
14
12
10
8
6
4
2
0
0
100
7
5
3
2
10
7
5
3
2
IC -- VCE
1.8A 1.6A 1.4A
2.0A
1.2A
1.0A
0.8A
0.6A
0.4A
0.2A
0.1A
IB=0
1 2 3 4 5 6 7 8 9 10
Collector-to-Emitter Voltage, VCE -- V IT03573
hFE -- IC
VCE=5V
Ta=120°C
25°C
--40°C
1.0
0.1
2 3 5 7 1.0 2 3 5 7 10
Collector Current, IC -- A
23 5
IT03575
20
VCE=5V
18
IC -- VBE
16
14
12
10
8
6
4
2
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Base-to-Emitter Voltage, VBE -- V
VCE(sat) -- IC
10
7 IC / IB=5
5
IT03574
3
2
1.0
7
5
3
2
0.1 Ta= --40°C
7
5 120°C
3 25°C
2
0.01
0.1
2 3 5 7 1.0
2 3 5 7 10
Collector Current, IC -- A
23 5
IT03576
No.7451-2/4
Free Datasheet http://www.datasheet4u.com/




 C5793
2SC5793
SW Time -- IC
10
7
5
VCC=200V
tstg
IC / IB1=6
IB2 / IB1=3
R load
3
2
1.0
7
5
10 SW Time -- IB2
7
VCC=200V
IC=10A
5
tstg
IB1=1.6A
R load
3
2
tf
1.0
7
5
3 tf
2
3
2
0.1
0.1
23
100
7
5
ICP=40A
3
2
IC=20A
10
7
5
3
2
5 7 1.0
2 3 5 7 10
Collector Current, IC -- A
Forward Bias A S O
23
IT03577
PC =95W
300µs
1.0
7
5
3
2
0.1
DC
operation
7
5
3
2
Tc=25°C
Single pulse
0.01
1.0 2 3 5 7 10
2 3 5 7 100 2 3
Collector-to-Emitter Voltage, VCE -- V
PC -- Ta
4.0
5 7 1000
IT03579
3.5
3.0
2.5
2.0 No heat sink
1.5
1.0
0.5
0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT03581
0.1
0.1
100
7
5
3
2
10
7
5
3
2
1.0
7
5
3
2
0.1
100
100
95
90
80
70
60
50
40
30
20
10
0
0
23
5 7 1.0
23
Base Current, IB2 -- A
Reverse Bias A S O
5 7 1.0
IT03578
L=100µH
IB2= --4A
Tc=25°C
Single pulse
23
5 7 1000
23
Collector-to-Emitter Voltage, VCE -- V IT03580
PC -- Tc
20 40 60 80 100 120 140 160
Case Temperature, Tc -- °C
IT03582
No.7451-3/4
Free Datasheet http://www.datasheet4u.com/






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