DatasheetsPDF.com

N-Channel MOSFET. AMP7313 Datasheet

DatasheetsPDF.com

N-Channel MOSFET. AMP7313 Datasheet






AMP7313 MOSFET. Datasheet pdf. Equivalent




AMP7313 MOSFET. Datasheet pdf. Equivalent





Part

AMP7313

Description

Dual N-Channel MOSFET

Manufacture

ANPEC

Datasheet
Download AMP7313 Datasheet


ANPEC AMP7313

AMP7313; APM7313 Dual N-Channel Enhancement Mode MOSFET Features • • • • 30V/6A , RDS(ON)=21mΩ(typ.) @ VGS=10V RDS(O N)=27mΩ(typ.) @ VGS=4.5V Super High D ense Cell Design for Extremely Low RDS( ON) Reliable and Rugged SO-8 Package P in Description SO-8 S1 G1 S2 G2 1 2 3 4 8 7 6 5 D1 D1 D2 D2 Top View Applica tions • Power Management in Notebook Computer , Portable Equipment an.


ANPEC AMP7313

d Battery Powered Systems. G1 D1 D1 D 2 D2 G2 S1 S2 N-Channel MOSFET N-C hannel MOSFET Ordering and Marking Inf ormation APM 7313 H a n d lin g C o d e Tem p. R ange P ackage C ode P ackage C ode K : S O -8 O p e ra tin g J u n c tio n T e m p . R a n g e C : -5 5 to 1 5 0 ° C H a n d lin g C o d e TU : T ube TR : Tape & Reel APM 7313 K : APM 7313 XXXXX X X X .


ANPEC AMP7313

X X - D a te C o d e Absolute Maximum R atings Symbol VDSS VGSS Drain-Source Vo ltage Gate-Source Voltage Parameter (T A = 25°C unless otherwise noted) Ratin g 30 ±20 V Unit ANPEC reserves the ri ght to make changes to improve reliabil ity or manufacturability without notice , and advise customers to obtain the la test version of relevant information to verify before placi.



Part

AMP7313

Description

Dual N-Channel MOSFET

Manufacture

ANPEC

Datasheet
Download AMP7313 Datasheet




 AMP7313
APM7313
Dual N-Channel Enhancement Mode MOSFET
Features
Pin Description
30V/6A
,
RDS(ON)=21m(typ.)
@
V =10V
GS
RDS(ON)=27m(typ.) @ VGS=4.5V
Super High Dense Cell Design for Extremely
Low R
DS(ON)
Reliable and Rugged
SO-8 Package
Applications
SO-8
S1 1
G1 2
S2 3
G2 4
8 D1
7 D1
6 D2
5 D2
Top View
D1 D1
D2 D2
Power Management in Notebook Computer ,
Portable Equipment and Battery Powered
Systems.
G1
G2
S1 S2
N-Channel MOSFET N-Channel MOSFET
Ordering and Marking Information
APM 7313
APM7313 K :
H a n d lin g C o d e
Temp. Range
Package Code
APM 7313
XXXXX
Package Code
K : SO -8
O perating Junction Tem p. R ange
C : -55 to 150°C
H andling C ode
TU : Tube
TR : Tape & Reel
XXX XX - D ate Code
Absolute Maximum Ratings
(T
A
=
25°C
unless
otherwise
noted)
Symbol
VDSS
VGSS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Rating
30
±20
Unit
V
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ANPEC Electronics Corp.
Rev. A.5 - Feb., 2003
1
www.anpec.com.tw
Free Datasheet http://www.datasheet4u.com/





 AMP7313
APM7313
Absolute Maximum Ratings (Cont.) (TA = 25°C unless otherwise noted)
Symbol
Parameter
ID* Maximum Drain Current – Continuous
IDM Maximum Drain Current – Pulsed
PD Maximum Power Dissipation TA=25°C
TA=100°C
TJ Maximum Junction Temperature
TSTG Storage Temperature Range
RθjA Thermal Resistance – Junction to Ambient
* Surface Mounted on FR4 Board, t 10 sec.
Rating
6
24
2.5
1.0
150
-55 to 150
50
Unit
A
W
W
°C
°C
°C/W
Electrical Characteristics
(T
A
=
25°C
unless
otherwise
noted)
Symbol
Parameter
Test Condition
Static
BVDSS
Drain-Source Breakdown
Voltage
VGS=0V , IDS=250µA
IDSS
Zero Gate Voltage Drain
Current
VDS=24V , VGS=0V
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
Ra
DS(ON)
Drain-Source On-state
Resistance
VSDa Diode Forward Voltage
Dynamicb
VDS=VGS , IDS=250µA
VGS=±20V , VDS=0V
VGS=10V , IDS=3.5A
VGS=4.5V , IDS=2A
ISD=2A , VGS=0V
Qg
Qgs
Qgd
td(ON)
Tr
td(OFF)
Tf
Ciss
Coss
Crss
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDS=15V , IDS= 10A
VGS=10V
Turn-on Delay Time
Turn-on Rise Time
VDD=15V , IDS=2A ,
Turn-off Delay Time
Turn-off Fall Time
VGEN=10V , RG=6
Input Capacitance
VGS=0V
Output Capacitance
VDS=25V
Reverse Transfer Capacitance Frequency=1.0MHz
Notes
a : Pulse test ; pulse width 300µs, duty cycle 2%
b : Guaranteed by design, not subject to production testing
APM7313
Min. Typ. Max.
30
1
1 1.5 2
±100
21 28
27 42
0.7 1.3
30
5.8
3.8
11
17
37
20
1200
210
95
36
22
33
68
38
Unit
V
µA
V
nA
m
V
nC
ns
pF
Copyright ANPEC Electronics Corp.
Rev. A.5 - Feb., 2003
2
www.anpec.com.tw
Free Datasheet http://www.datasheet4u.com/





 AMP7313
APM7313
Typical Characteristics
Output Characteristics
30
25 VGS=4,4.5,6,8,10V
20
15
VGS=3.5V
10
VGS=3V
5
VGS=2.5V
0
0 1 2 3 4 5 6 7 8 9 10
VDS-Drain-to-Source Voltage (V)
Threshold Voltage vs. Junction Temperature
1.2
IDS=250µA
1.0
0.8
0.6
0.4
-50 -25
0
25 50 75 100 125 150
T -Junction
j
Temperature
(°C)
Transfer Characteristics
40
30
20
TJ=25°C
10
TJ=125°C
TJ=-55°C
0
1.0 1.5 2.0 2.5 3.0
3.5 4.0
VGS-Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.050
0.045
0.040
0.035
0.030
0.025
0.020
0.015
0.010
0.005
0.000
0
VGS=4.5V
VGS=10V
5 10 15 20 25
I -Drain Current (A)
DS
30
Copyright ANPEC Electronics Corp.
Rev. A.5 - Feb., 2003
3
www.anpec.com.tw
Free Datasheet http://www.datasheet4u.com/



Recommended third-party AMP7313 Datasheet






@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)