DatasheetsPDF.com

PT9701B Dataheets PDF



Part Number PT9701B
Manufacturers ASI
Logo ASI
Description NPN SILICON RF POWER TRANSISTOR
Datasheet PT9701B DatasheetPT9701B Datasheet (PDF)

PT9701B NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI PT9701B is a Common Emitter Device Designed for Class A , AB and C Amplifier Applications in the 225 - 400 MHz Military Communications Band. PACKAGE STYLE .280 4L STUD FEATURES INCLUDE: • Gold Metalization • Emitter Ballasting • High Gain MAXIMUM RATINGS IC VCES PDISS TJ T STG θ JC 1.25 A 45 V 14 W @ TC = 25 OC -55 OC to +200 OC -55 OC to +200 OC 12 OC/W 1 = COLLECTOR 2 = BASE 3 & 4 = EMITTER CHARACTERISTICS SYMBOL BV CEO BV CES .

  PT9701B   PT9701B


Document
PT9701B NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI PT9701B is a Common Emitter Device Designed for Class A , AB and C Amplifier Applications in the 225 - 400 MHz Military Communications Band. PACKAGE STYLE .280 4L STUD FEATURES INCLUDE: • Gold Metalization • Emitter Ballasting • High Gain MAXIMUM RATINGS IC VCES PDISS TJ T STG θ JC 1.25 A 45 V 14 W @ TC = 25 OC -55 OC to +200 OC -55 OC to +200 OC 12 OC/W 1 = COLLECTOR 2 = BASE 3 & 4 = EMITTER CHARACTERISTICS SYMBOL BV CEO BV CES BV EBO hFE Cob PG ηC IC = 20 mA IC = 10 mA IE = 1.0 mA VCE = 5.0 V VCB = 28 V VCE = 28 V TC = 25 OC TEST CONDITIONS MINIMUM TYPICAL MAXIMUM 25 45 3.5 UNITS V V V --- IC = 200 mA f = 1.0 MHz Pout = 5.0 W f = 400 MHz 15 7.0 10 50 12 55 pF dB % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 F r e eD a t a s h e e th t p / :/ w w w d .a t a s h e e t 4 u c .o m / .


B1182 PT9701B LTC-4622G


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)