BARRIER DIODE. YG805C10R Datasheet

YG805C10R Datasheet PDF, Equivalent


Part Number

YG805C10R

Description

SCHOTTKY BARRIER DIODE

Manufacture

Fuji Electric

Total Page 3 Pages
PDF Download
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YG805C10R Datasheet
YG805C10R
SCHOTTKY BARRIER DIODE
(100V / 20A TO-22OF15)
Outline Drawings
10±0.5
+0.2
ø3.2 -0.1
4.5±0.2
2.7±0.2
123
Features
Low VF
Super high speed switching.
High reliability by planer design.
Applications
High speed power switching.
1.2±0.2
0.7±0.2
2.54±0.2
+0.2
0.6 -0
2.7±0.2
JEDEC
EIAJ
SC-67
Connection Diagram
2
Maximum Ratings and Characteristics
Absolute Maximum Ratings
1
3
Item
Symbol
Conditions
Rating
Unit
Repetitive peak reverse voltage
VRRM
100 V
Repetitive peak surge reverse voltage
Isolating voltage
Average output current
Suege current
VRSM
Viso
IO
IFSM
tw=500ns, duty=1/40
Terminals to Case,
AC. 1min.
duty=1/2, Tc=91°C
Square wave
Sine wave 10ms
100
1500
20*
100
V
V
A
A
Operating junction temperature
Tj
+150
°C
Storage temperature
Tstg
Electrical Characteristics (Ta=25°C Unless otherwise specified )
-40 to +150
°C
* Out put current of centertap full wave connection.
Item
Symbol
Conditions
Max.
Unit
Forward voltage drop **
VF IF=5.0A
0.8 V
Reverse current **
IR VR=VRRM
2.5 mA
Thermal resistance
Mechanical Characteristics
Rth(j-c)
Junction to case
2.5 °C/W
** Rating per element
Mounting torque
Weight
Recommended torque
0.3 to 0.5
2.3
N·m
g
Free Datasheet http://www.datasheet4u.net/

YG805C10R Datasheet
(100V / 20A TO-22OF15)
Characteristics
Forward Characteristic (typ.)
100
Tj=150 o C
10 Tj=125 o C
Tj=100 o C
Tj=25 o C
1
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
VF Forward Voltage (V)
Forward Power Dissipation
18
17
16
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
0
Io
λ
360°
Square wave λ=60 o
Square wave λ=120 o
Sine wave λ=180 o
Square wave λ=180 o
DC
Per 1element
1 2 3 4 5 6 7 8 9 10 11
Io Average Forward Current (A)
Current Derating (Io-Tc)
160
150
140
130
120
DC
110
100
Sine wave λ=180 o
90 Square wave λ=180 o
80
Square wave λ=120 o
70
60
50
40 360°
λ
30 Io
Square wave λ=60 o
20 VR=50V
10
0
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32
Io Average Output Current (A)
λ:Conduction angle of forward current for each rectifier element
Io:Output current of center-tap full wave connection
YG805C10R
Reverse Characteristic (typ.)
103
Tj=150 oC
102 Tj=125 oC
Tj=100 oC
101
100
10-1 Tj= 25 oC
10-2
10-3
0
10 20 30 40 50 60 70 80 90 100 110
VR Reverse Voltage (V)
Reverse Power Dissipation
40
360°
35
VR
30
α
25
DC
20
α =180 o
15
10
5
0
0 10 20 30 40 50 60 70 80 90 100 110
VR Reverse Voltage (V)
Junction Capacitance Characteristic (typ.)
10000
1000
100
10
1
10 100 1000
VR Reverse Voltage (V)
Free Datasheet http://www.datasheet4u.net/


Features Datasheet pdf YG805C10R SCHOTTKY BARRIER DIODE (100V / 20A TO-22OF15) Outline Drawings 10±0 .5 ø3.2 +0.2 -0.1 4.5±0.2 2.7±0.2 6 .3 2.7±0.2 1 2 3 3.7±0.2 1.2±0 .2 13Min Features Low VF Super high sp eed switching. High reliability by plan er design. 15±0.3 0.7±0.2 2.54±0.2 0.6 +0.2 -0 2.7±0.2 JEDEC EIAJ S C-67 Applications High speed power swi tching. Connection Diagram 2 1 3 Maxi mum Ratings and Characteristics Absolut e Maximum Ratings Item Repetitive peak reverse voltage Repetitive peak surge r everse voltage Isolating voltage Averag e output current Suege current Operatin g junction temperature Storage temperat ure Symbol VRRM VRSM Viso IO IFSM Tj Ts tg tw=500ns, duty=1/40 Terminals to Cas e, AC. 1min. duty=1/2, Tc=91°C Square wave Sine wave 10ms Conditions Rating 100 100 1500 20* 100 +150 -40 to +150 Unit V V V A A °C °C * Out put curre nt of centertap full wave connection. E lectrical Characteristics (Ta=25°C Unl ess otherwise specified ) Item Forward voltage drop ** Reverse current ** Ther.
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