59N25

FDA59N25 250V N-Channel MOSFET September 2005 UniFET FDA59N25 250V N-Channel MOSFET Features 59A, 250V, RDS(on) = 0.049Ω @VGS = 10 V Low gate charge (typical 63 nC) Low Crss (typical 70 pF) Fast switching 100% avalanche tested Improved dv/dt capability TM VDS = 250V VDS(Avalanche) = 300V RDS(on) Typ. @10V = 41mΩ Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. D { z G{   z z TO-3P G DS FDA Series { S Absolute Maximum Ratings Symbol VDSS VDS(Avalanche) ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Repetitive Avalanche Voltage Drain Current Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C (Note 2) (Note 1) (Note 1) (Note 3) (Note 1, 2) Parameter FDA59N25 250 300 59 35 (Note 1) Unit V V A A A V mJ A mJ V/ns W W/°C °C °C - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed 236 ±30 1458 59 39.2 4.5 392 3.2 -55 to +150 300 Operating and Storage Temperature Range Maximum Lead Temper...