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K4107

2SK4107

Description

2SK4107 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS VI) 2SK4107 ○ Switching Regulator Applications Unit: mm Low drain−source ON resistance : RDS (ON) = 0. 33 Ω (typ.) High forward transfer admittance : |Yfs| = 8.5 S (typ.) Low leakage current : IDSS = 100 μA (max) (VDS = 500 V) Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 ...

Toshiba Semiconductor

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