FLM3135-8F
C-Band Internally Matched FET
FEATURES High Output Power: P1dB = 39.5dBm (Typ.) High Gain: G1dB = 11.0dB (Typ.) High PAE: hadd = 37% (Typ.) Low IM3 = -45dBc@Po = 28.5dBm Broad Band: 3.1 to 3.5GHz Impedance Matched Zin/Zout = 50ohm Hermetically Sealed Package DESCRIPTION The FLM3135-8F is a power GaAs FET that is internally matched fo...
