IRGP4066D-EPBF BIPOLAR TRANSISTOR Datasheet

IRGP4066D-EPBF Datasheet, PDF, Equivalent


Part Number

IRGP4066D-EPBF

Description

INSULATED GATE BIPOLAR TRANSISTOR

Manufacture

International Rectifier

Total Page 11 Pages
Datasheet
Download IRGP4066D-EPBF Datasheet


IRGP4066D-EPBF
PD - 97576
IRGP4066DPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
IRGP4066D-EPbF
Features
• Low VCE (ON) Trench IGBT Technology
• Low Switching Losses
• Maximum Junction Temperature 175 °C
• 5 μS short circuit SOA
• Square RBSOA
• 100% of The Parts Tested for ILM
• Positive VCE (ON) Temperature Coefficient
• Tight Parameter Distribution
• Lead Free Package
C
G
E
n-channel
VCES = 600V
IC(Nominal) = 75A
tSC 5μs, TJ(max) = 175°C
VCE(on) typ. = 1.70V
Benefits
• High Efficiency in a Wide Range of Applications
• Suitable for a Wide Range of Switching Frequencies due to
Low VCE (ON) and Low Switching Losses
• Rugged Transient Performance for Increased Reliability
• Excellent Current Sharing in Parallel Operation
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
INOMINAL
ICM
ILM
IF @ TC = 25°C
IF @ TC = 100°C
IFM
VGE
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Nominal Current
Pulse Collector Current, VGE = 15V
cClamped Inductive Load Current, VGE = 20V
Diode Continous Forward Current
Diode Continous Forward Current
dDiode Maximum Forward Current
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
RθJC (IGBT)
RθJC (Diode)
Parameter
fThermal Resistance Junction-to-Case-(each IGBT)
fThermal Resistance Junction-to-Case-(each Diode)
RθCS
Thermal Resistance, Case-to-Sink (flat, greased surface)
RθJA Thermal Resistance, Junction-to-Ambient (typical socket mount)
1
CC
GCE
E
C
G
TO-247AC
IRGP4066DPbF
TO-247AD
IRGP4066D-EPbF
G
Gate
C
Collector
E
Emitter
Max.
600
140
90
75
225
300
140
90
300
±20
±30
454
227
-55 to +175
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Units
V
A
V
W
°C
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
–––
Max.
0.33
1.0
–––
40
Units
°C/W
www.irf.com
10/08/2010
Free Datasheet http://www.datasheet4u.net/

IRGP4066D-EPBF
IRGP4066DPbF/IRGP4066D-EPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max.
V(BR)CES
Collector-to-Emitter Breakdown Voltage
600 —
ΔV(BR)CES/ΔTJ Temperature Coeff. of Breakdown Voltage
— 0.30 —
— 1.70 2.10
VCE(on)
Collector-to-Emitter Saturation Voltage
— 2.0 —
— 2.1 —
VGE(th)
Gate Threshold Voltage
4.0 — 6.5
ΔVGE(th)/ΔTJ Threshold Voltage temp. coefficient
— -21 —
gfe Forward Transconductance
— 50 —
ICES Collector-to-Emitter Leakage Current
— 1.0 100
— 1040 —
VFM Diode Forward Voltage Drop
— 2.23 3.0
— 1.8 —
IGES Gate-to-Emitter Leakage Current
— — ±200
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max.
Qg Total Gate Charge (turn-on)
— 150 225
Qge Gate-to-Emitter Charge (turn-on)
— 40 60
Qgc Gate-to-Collector Charge (turn-on)
— 60 90
Eon Turn-On Switching Loss
— 2465 3360
Eoff Turn-Off Switching Loss
— 2155 3040
Etotal
Total Switching Loss
— 4620 6400
td(on)
Turn-On delay time
— 50 70
tr Rise time
— 70 90
td(off)
Turn-Off delay time
— 200 225
tf Fall time
— 60 80
Eon Turn-On Switching Loss
— 3870 —
Eoff Turn-Off Switching Loss
— 2815 —
Etotal
Total Switching Loss
— 6685 —
td(on)
Turn-On delay time
— 50 —
tr Rise time
— 70 —
td(off)
Turn-Off delay time
— 240 —
tf Fall time
— 70 —
Cies Input Capacitance
— 4440 —
Coes Output Capacitance
— 245 —
Cres Reverse Transfer Capacitance
— 130 —
RBSOA
Reverse Bias Safe Operating Area
FULL SQUARE
SCSOA
Short Circuit Safe Operating Area
5 ——
Erec
trr
Irr
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
Peak Reverse Recovery Current
— 470 —
— 155 —
— 27 —
Units
Conditions
eV VGE = 0V, IC = 100μA
V/°C
V
VGE = 0V, IC = 2.0mA (25°C-175°C)
dIC = 75A, VGE = 15V, TJ = 25°C
dIC = 75A, VGE = 15V, TJ = 150°C
dIC = 75A, VGE = 15V, TJ = 175°C
V VCE = VGE, IC = 2.1mA
mV/°C VCE = VGE, IC = 2.1mA (25°C - 175°C)
S VCE = 50V, IC = 75A, PW = 60μs
μA VGE = 0V, VCE = 600V
VGE = 0V, VCE = 600V, TJ = 175°C
V IF = 75A
IF = 75A, TJ = 175°C
nA VGE = ±20V
Units
Conditions
IC = 75A
nC VGE = 15V
VCC = 400V
IC = 75A, VCC = 400V, VGE = 15V
μJ RG = 10Ω, L = 200μH, TJ = 25°C
Energy losses include tail & diode reverse recovery
IC = 75A, VCC = 400V, VGE = 15V
ns RG = 10Ω, L = 200μH, TJ = 25°C
IC = 75A, VCC = 400V, VGE=15V
μJ RG=10Ω, L=200μH, TJ = 175°C
Energy losses include tail & diode reverse recovery
IC = 75A, VCC = 400V, VGE = 15V
ns RG = 10Ω, L = 200μH
TJ = 175°C
pF VGE = 0V
VCC = 30V
f = 1.0Mhz
TJ = 175°C, IC = 300A
VCC = 480V, Vp ” 600V
Rg = 10Ω, VGE = +20V to 0V
μs VCC = 400V, Vp ”Ã600V
Rg = 10Ω, VGE = +15V to 0V
μJ TJ = 175°C
ns VCC = 400V, IF = 75A
A VGE = 15V, Rg = 10Ω, L = 60μH
Notes:
 VCC = 80% (VCES), VGE = 20V, L = 10μH, RG = 10Ω.
‚ Pulse width limited by max. junction temperature.
ƒ Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
„ Rθ is measured at TJ of approximately 90°C.
2 www.irf.comFree Datasheet http://www.datasheet4u.net/


Features PD - 97576 INSULATED GATE BIPOLAR TRANS ISTOR WITH ULTRAFAST SOFT RECOVERY DIOD E Features • • • • • • • • • Low VCE (ON) Trench IGBT Techno logy Low Switching Losses Maximum Junct ion Temperature 175 °C 5 μS short cir cuit SOA Square RBSOA 100% of The Parts Tested for ILM Positive VCE (ON) Tempe rature Coefficient Tight Parameter Dist ribution Lead Free Package C IRGP4066D PbF IRGP4066D-EPbF VCES = 600V IC(Nomin al) = 75A G E tSC ≥ 5μs, TJ(max) = 175°C n-channel VCE(on) typ. = 1.70 V Benefits • High Efficiency in a Wi de Range of Applications • Suitable f or a Wide Range of Switching Frequencie s due to Low VCE (ON) and Low Switching Losses • Rugged Transient Performanc e for Increased Reliability • Excelle nt Current Sharing in Parallel Operatio n C E C G TO-247AC IRGP4066DPbF C E C G TO-247AD IRGP4066D-EPbF G Gate C Collector Max. 600 140 90 75 225 300 14 0 90 300 ±20 ±30 454 227 -55 to +175 E Emitter Units V Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C INOMIN.
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