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F04F150S

Fairchild Semiconductor

DAMPER DIODE

FFPF04F150S FFPF04F150S Features • High voltage and high reliability • High speed switching • Low forward voltage Appl...


Fairchild Semiconductor

F04F150S

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FFPF04F150S FFPF04F150S Features High voltage and high reliability High speed switching Low forward voltage Applications Suitable for damper diode in horizontal deflection circuits 1 2 TO-220F 1. Cathode 2. Anode DAMPER DIODE Absolute Maximum Ratings Symbol VRRM IF(AV) IFSM TJ, TSTG TC=25°C unless otherwise noted Value 1500 @ TC = 125°C 4 40 - 65 to +150 Units V A A °C Parameter Peak Repetitive Reverse Voltage Average Rectified Forward Current Non-repetitive Peak Surge Current 60Hz Single Half-Sine Wave Operating Junction and Storage Temperature Thermal Characteristics Symbol RθJC Parameter Maximum Thermal Resistance, Junction to Case TC=25 °C unless otherwise noted Min. TC = 25 °C TC = 125 °C TC = 25 °C TC = 125 °C Typ. Max. 1.5 1.4 µA 5 250 170 450 19 ns ns V Units V Value 5.0 Units °C/W Electrical Characteristics Symbol V FM * Parameter Maximum Instantaneous Forward Voltage I F = 4A I F = 4A Maximum Instantaneous Reverse Current @ rated VR Maximum Reverse Recovery Time (IF =1A, di/dt = 50A/µ s) Maximum Forward Recovery Time (IF =6.5A, di/dt = 50A/µs) Voltage IRM * trr tfr Maximum Forward Recovery VFRM * Pulse Test: Pulse Width=300µs, Duty Cycle=2% ©2000 Fairchild Semiconductor International Rev. F, September 2000 Free Datasheet http://www.datasheet4u.net/ FFPF04F150S Typical Characteristics 30 1000 Forward Current , IF [A] R [ µA] 10 100 TJ = 125 C o 10 TJ = 125 C 1 o Reverse Current , I 1 TJ = 100 C o TJ = 25 C o 0.1 0.01 TJ = 2...




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