SVD4N65T

SVD4N65T/SVD4N65F 4A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD4N65T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure DMOS technology. The improved planar stripe cell and the improved guarding ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers. FEATURES ∗ 4A,650V,RDS(on) typ =2.3Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability ORDERING SPECIFICATIONS Part No. SVD4N65T SVD4N65F Package TO-220-3L TO-220F-3L Marking SVD4N65T SVD4N65F Shipping 50Unit/Tube 50Unit/Tube ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current Pulsed Power Dissipation(TC=25°C) -Derate above 25°C Single Pulsed Avalanche Energy (Note 1) Repetitive Avalanche Energy Operation Junction Temperature Storage Temperature Symbol VDS VGS ID IDM PD EAS EAR TJ Tstg -55 -55 100 0.8 240 10.6 +150 +150 SVD4N65T 650 ±30 4.0 16 33 0.26 SVD4N65F Unit V V A A W W/°C mJ mJ °C °C HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.3 2009.07.09 Page 1 of 7 Free Datasheet http://www.datasheet4u.net/ SVD4N65T/SVD4N65F THERMAL CHARACTERISTICS Parameter Thermal Resista...