C3858

2SC3858 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1494) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC3858 200 200 6 17 5 200(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C Application : Audio and General Purpose (Ta=25°C) sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=200V VEB=6V IC=50mA VCE=4V, IC=8A IC=10A, IB=1A VCE=12V, IE=–1A VCB=10V, f=1MHz 100max 100max 200min External Dimensions MT-200 36.4±0.3 24.4±0.2 2-ø3.2±0.1 9 7 21.4±0.3 2.1 6.0±0.2 2SC3858 Unit µA µA V a b 50min∗ 2.5max 20typ 300typ V MHz pF 20.0min 4.0max 2 3 1.05 +0.2 -0.1 5.45±0.1 B C E 5.45±0.1 0.65 +0.2 -0.1 3.0 +0.3 -0.1 ∗hFE Rank Y(50 to 100), P(70 to 140), G(90 to 180) sTypical Switching Characteristics (Common Emitter) VCC (V) 40 RL (Ω) 4 IC (A) 10 VBB1 (V) 10 VBB2 (V) –5 IB1 (A) 1 IB2 (A) –1 ton (µs) 0.5typ tstg (µs) 1.8typ tf (µs) 0.6typ Weight : Approx 18.4g a. Type No. b. Lot No. I C – V CE Characteristics (Typical) 5A V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V CE(s a t) (V ) 3 I C – V BE Temperature Characteristics (Typical) 17 15 (V CE =4V) 17 15 1. 1A 7 m 00 A m 500 A 300m Collector Current I C (A) A 20 0m A 2 Collector Current I C (A) 10 100mA 10 p) Tem 125 I B =20mA 10A 5A 0 0 1 2 3 0 0 0 0 1 2 3 4 –30˚C 25˚C I C =15A ˚C (Case (Ca 5 50mA 5 se 1 1 Base-Emittor Voltage V B E (V) Temp ) 2 Collector-...