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Ordering number : ENA0363A
2SK2628ALS
SANYO Semiconductors
DATA SHEET
N-Channel Silicon MOSFET
2SK2628ALS
Features
• • •
General-Purpose Switching Device Applications
Low ON-resistance. Low Qg. Ultrahigh-speed switching.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *3 Avalanche Current *4 Symbol VDSS VGSS IDc*1 IDpack*2 IDP PD Tch Tstg EAS IAV Limited only by maximum temperature SANYO’s ideal heat dissipation condition PW≤10µs, duty cycle≤1% Tc=25°C (SANYO’s ideal heat dissipation condition) Conditions Ratings 600 ±30 7 6.2 24 2.0 35 150 --55 to +150 98 6 Unit V V A A A W W °C °C mJ A
*1 Shows chip capability *2 Package limited *3 VDD=50V, L=5mH, IAV=6A *4 L≤5mH, single pulse Marking : K2628
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2SK2628ALS
Electrical Characteristics at Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Trans.