ME60N03A

25V N-Channel Enhancement Mode MOSFET VDS=25V RDS(ON), Vgs@10V,Ids@30A = 8.5m RDS(ON), [email protected],Ids@30A =13m ME60N03A FEATURES Advanced trench process technology High density cell design for ultra low on-resistance Specially designed for DC/DC converters and motor drivers Fully characterized avalanche voltage and current PIN CONFIGURATION (TO-252) Top View Absolute Maximum Ratings (TA=25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation Unless Otherwise Noted) Symbol VDSS VGSS ID IDM Limit 25 ±20 50 100 50 23 -55 to 150 110 15 Steady State 20 40 Unit V V A A W TA=25 TA=70 PD TJ, Tstg ) EAS RθJA RθJC Operating Junction and Storage Temperature Range Avalanche Energy with Single Pulse(L=0.5mH,Rg=25 Thermal Resistance-Junction to Ambient* Thermal Resistance-Junction to Case *The device mounted on 1in2 FR4 board with 2 oz copper Apr, 2007 – Version 4.1 Free Datasheet http://www.datasheet4u.net/ 01 25V N-Channel Enhancement Mode MOSFET Electrical Characteristics (TA =25 Symbol STATIC BVDSS VGS(th) IGSS IDSS RDS(ON) DYNAMIC Qg Qgs Qgd Ciss Coss Crss Rg Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time RL=15 , VGEN =10V, ID=1A VDD=15V, RG=24 VDS=15V, VGS=0V, f=1MHz VDS=0V, VGS=0V, f=1MHz VDS=15V, VGS=10V, ID=35A Drain-Source Breakdown V...