Document
ME60N03AS
25V N-Channel Enhancement Mode MOSFET
VDS=25V RDS(ON), Vgs@10V,Ids@30A ≦ 9mΩ RDS(ON), Vgs@ 5V,Ids@15A ≦18mΩ
APPLICATIONS
● Motherboard (V-Core) ● DC/DC Converter ● Load Switch ● LCD Display inverter ● IPC
FEATURES
Advanced trench process technology High density cell design for ultra low on-resistance Specially designed for DC/DC converters and motor drivers Fully characterized avalanche voltage and current
PIN
CONFIGURATION
(TO-252) Top View
Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current(Tj=150℃)* Pulsed Drain Current Maximum Power Dissipation TC=25℃ TC=70℃ TC=25℃
Symbol
VDSS VGSS ID IDM PD TJ, Tstg EAS RθJA RθJC
Limit
25 ±20 53 100 40 25 -55 to 150 50 T≦10 sec Steady State 3.1 15 40
Unit
V V A A W ℃ mJ ℃/W ℃/W
Operating Junction and Storage Temperature Range Avalanche Energy with Single Pulse(L=0.1mH,Rg=25Ω) Thermal Resistance-Junction to Ambient* Thermal Resistance-Junction to Case
*The device mounted on 1in2 FR4 board with 2 oz copper
Sep, 2008 – Version 2.1
Free Datasheet http://www.datasheet4u.net/
01
ME60N03AS
25V N-Channel Enhancement Mode MOSFET
Electrical Characteristics (TA =25℃ Unless Otherwise Specified)
Symbol
STATIC BVDSS VGS(th) IGSS IDSS RDS(ON) DYNAMIC Qg Qg Qgs Qgd Ciss Coss Crss Rg Total Gate Charge Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time RL=15Ω, VGEN =10V, ID=1A VDD=15V, RG=3Ω VDS=15V, VGS=0V, f=1MHz VDS=0V, VGS=0V, f=1MHz VDS=15V, VGS=4.5V, ID=25A VDS=15V, VGS=10V, ID=25A 22 11 5.4 5.5 840 180 55 1 13.5 13 42 4 ns Ω pF nC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Drain-Source On-Resistance VGS=0V, ID=250μA VDS=VGS, ID=250μA VDS=0V, VGS=±20V VDS=25V, VGS=0V VGS=10V, ID=30A VGS= 5V, ID=15A 6.7 13 25 1 3 ±100 1 9 18 V V nA μA mΩ
Parameter
Limit
Min Typ
Max
Unit
td(on) tr td(off) tf
IS VSD
SOURCE-DRAIN DIODE Max.Diode Forward Current Diode Forward Voltage IS=20A, VGS=0V 0.87 20 1.5 A V
Note: Pulse test: pulse width<=300us, duty cycle<=2%
Sep, 2008 – Version 2.1
Free Datasheet http://www.datasheet4u.net/
02
ME60N03AS
25V N-Channel Enhancement Mode MOSFET
Typical Characteristics (TJ =25℃ Noted)
Sep, 2008 – Version 2.1
Free Datasheet http://www.datasheet4u.net/
03
ME60N03AS
25V N-Channel Enhancement Mode MOSFET
Typical Characteristics (TJ =25℃ Noted)
Sep, 2008 – Version 2.1
Free Datasheet http://www.datasheet4u.net/
04
ME60N03AS
25V N-Channel Enhancement Mode MOSFET
TO-252 Package Outline
SYMBOL A A1 B B1 B2 C D D2 D3 H E E2 L L1 L2 L3 P
MILLIMETERS (mm) MIN MAX 2.00 2.50 0.90 1.30 0.50 0.85 0.50 0.80 0.50 1.00 0.40 0.60 5.20 5.70 6.50 7.30 2.20 3.00 9.50 10.50 6.30 6.80 4.50 5.50 1.30 1.70 0.90 1.70 0.50 1.10 0 0.30 2.00 2.80
Sep, 2008 – Version 2.1
Free Datasheet http.