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ME60N03AS Dataheets PDF



Part Number ME60N03AS
Manufacturers Matsuki
Logo Matsuki
Description 25V N-Channel Enhancement Mode MOSFET
Datasheet ME60N03AS DatasheetME60N03AS Datasheet (PDF)

ME60N03AS 25V N-Channel Enhancement Mode MOSFET VDS=25V RDS(ON), Vgs@10V,Ids@30A ≦ 9mΩ RDS(ON), Vgs@ 5V,Ids@15A ≦18mΩ APPLICATIONS ● Motherboard (V-Core) ● DC/DC Converter ● Load Switch ● LCD Display inverter ● IPC FEATURES Advanced trench process technology High density cell design for ultra low on-resistance Specially designed for DC/DC converters and motor drivers Fully characterized avalanche voltage and current PIN CONFIGURATION (TO-252) Top View Absolute Maximum Ratings (TA=25℃ Unles.

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ME60N03AS 25V N-Channel Enhancement Mode MOSFET VDS=25V RDS(ON), Vgs@10V,Ids@30A ≦ 9mΩ RDS(ON), Vgs@ 5V,Ids@15A ≦18mΩ APPLICATIONS ● Motherboard (V-Core) ● DC/DC Converter ● Load Switch ● LCD Display inverter ● IPC FEATURES Advanced trench process technology High density cell design for ultra low on-resistance Specially designed for DC/DC converters and motor drivers Fully characterized avalanche voltage and current PIN CONFIGURATION (TO-252) Top View Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current(Tj=150℃)* Pulsed Drain Current Maximum Power Dissipation TC=25℃ TC=70℃ TC=25℃ Symbol VDSS VGSS ID IDM PD TJ, Tstg EAS RθJA RθJC Limit 25 ±20 53 100 40 25 -55 to 150 50 T≦10 sec Steady State 3.1 15 40 Unit V V A A W ℃ mJ ℃/W ℃/W Operating Junction and Storage Temperature Range Avalanche Energy with Single Pulse(L=0.1mH,Rg=25Ω) Thermal Resistance-Junction to Ambient* Thermal Resistance-Junction to Case *The device mounted on 1in2 FR4 board with 2 oz copper Sep, 2008 – Version 2.1 Free Datasheet http://www.datasheet4u.net/ 01 ME60N03AS 25V N-Channel Enhancement Mode MOSFET Electrical Characteristics (TA =25℃ Unless Otherwise Specified) Symbol STATIC BVDSS VGS(th) IGSS IDSS RDS(ON) DYNAMIC Qg Qg Qgs Qgd Ciss Coss Crss Rg Total Gate Charge Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time RL=15Ω, VGEN =10V, ID=1A VDD=15V, RG=3Ω VDS=15V, VGS=0V, f=1MHz VDS=0V, VGS=0V, f=1MHz VDS=15V, VGS=4.5V, ID=25A VDS=15V, VGS=10V, ID=25A 22 11 5.4 5.5 840 180 55 1 13.5 13 42 4 ns Ω pF nC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Drain-Source On-Resistance VGS=0V, ID=250μA VDS=VGS, ID=250μA VDS=0V, VGS=±20V VDS=25V, VGS=0V VGS=10V, ID=30A VGS= 5V, ID=15A 6.7 13 25 1 3 ±100 1 9 18 V V nA μA mΩ Parameter Limit Min Typ Max Unit td(on) tr td(off) tf IS VSD SOURCE-DRAIN DIODE Max.Diode Forward Current Diode Forward Voltage IS=20A, VGS=0V 0.87 20 1.5 A V Note: Pulse test: pulse width<=300us, duty cycle<=2% Sep, 2008 – Version 2.1 Free Datasheet http://www.datasheet4u.net/ 02 ME60N03AS 25V N-Channel Enhancement Mode MOSFET Typical Characteristics (TJ =25℃ Noted) Sep, 2008 – Version 2.1 Free Datasheet http://www.datasheet4u.net/ 03 ME60N03AS 25V N-Channel Enhancement Mode MOSFET Typical Characteristics (TJ =25℃ Noted) Sep, 2008 – Version 2.1 Free Datasheet http://www.datasheet4u.net/ 04 ME60N03AS 25V N-Channel Enhancement Mode MOSFET TO-252 Package Outline SYMBOL A A1 B B1 B2 C D D2 D3 H E E2 L L1 L2 L3 P MILLIMETERS (mm) MIN MAX 2.00 2.50 0.90 1.30 0.50 0.85 0.50 0.80 0.50 1.00 0.40 0.60 5.20 5.70 6.50 7.30 2.20 3.00 9.50 10.50 6.30 6.80 4.50 5.50 1.30 1.70 0.90 1.70 0.50 1.10 0 0.30 2.00 2.80 Sep, 2008 – Version 2.1 Free Datasheet http.


ME60N03A ME60N03AS K2368


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