K2368 Datasheet PDF | NEC





(PDF) K2368 Datasheet PDF

Part Number K2368
Description 2SK2368
Manufacture NEC
Total Page 8 Pages
PDF Download Download K2368 Datasheet PDF

Features: DATA SHEET MOS FIELD EFFECT TRANSISTORS 2SK2367/2SK2368 SWITCHING N-CHANNEL P OWER MOS FET INDUSTRIAL USE DESCRIPTIO N The 2SK2367/2SK2368 is N-Channel MOS Field Effect Transistor designed for hi gh voltage switching applications. PACK AGE DIMENSIONS (in millimeter) 1.0 15.7 MAX. 4 3.2±0.2 4.7 MAX. 1.5 FEATURES 2SK2368: RDS (on) = 0.6 Ω (VGS = 10 V, ID = 8.0 A) ABSOLUTE MAXIMUM RATIN GS (TA = 25 ˚C) Drain to Source Voltag e (2SK2367/2SK2368) Gate to Source Volt age Drain Current (DC) Drain Current (p ulse)* Total Power Dissipation (Tc = 25 ˚C) Total Power Dissipation (TA = 25 ˚C) Channel Temperature Storage Temper ature Single Avalanche Current** Single Avalanche Energy** * PW ≤ 10 µs, Du ty Cycle ≤ 1 % VDSS VGSS ID (DC) ID ( pulse) PT1 PT2 Tch Tstg IAS EAS 450/500 ± 30 ± 15 ± 60 120 3.0 150 15 161 V V A A W W ˚C A mJ 19 MIN. 3.0±0.2 • Low Ciss Ciss = 1 600 pF TYP. • H igh Avalanche Capability Ratings 1 2 3 2.2±0.2 5.45 1.0±0.2 5.45 4.5±0.2 2SK2367: RDS (on) = 0.5 Ω (VGS = 10 V, ID .

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K2368 datasheet
DATA SHEET
MOS FIELD EFFECT TRANSISTORS
2SK2367/2SK2368
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK2367/2SK2368 is N-Channel MOS Field Effect Transistor
designed for high voltage switching applications.
FEATURES
Low On-Resistance
2SK2367: RDS (on) = 0.5 (VGS = 10 V, ID = 8.0 A)
2SK2368: RDS (on) = 0.6 (VGS = 10 V, ID = 8.0 A)
Low Ciss Ciss = 1 600 pF TYP.
High Avalanche Capability Ratings
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage (2SK2367/2SK2368) VDSS 450/500 V
Gate to Source Voltage
VGSS
±30
V
Drain Current (DC)
ID (DC)
±15
A
Drain Current (pulse)*
ID (pulse) ±60
A
Total Power Dissipation (Tc = 25 ˚C) PT1 120 W
Total Power Dissipation (TA = 25 ˚C)
PT2
3.0 W
Channel Temperature
Tch 150 ˚C
Storage Temperature
Tstg –55 to +150 ˚C
Single Avalanche Current**
IAS 15 A
Single Avalanche Energy**
EAS 161 mJ
* PW 10 µs, Duty Cycle 1 %
** Starting Tch = 25 ˚C, RG = 25 , VGS = 20 V 0
PACKAGE DIMENSIONS
(in millimeter)
15.7 MAX. 3.2±0.2
4.7 MAX.
1.5
4
123
2.2±0.2
5.45
1.0±0.2 0.6±0.1 2.8±0.1
5.45
1. Gate
2. Drain
3. Source
4. Fin (Drain)
MP-88
Drain
Gate
Body
Diode
Source
Document No. TC-2506
(O. D. No. TC-8065)
Date Published December 1994 P
Printed in Japan
©
19954
Free Datasheet http://www.datasheet4u.net/

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