K2368

DATA SHEET MOS FIELD EFFECT TRANSISTORS 2SK2367/2SK2368 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2367/2SK2368 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. PACKAGE DIMENSIONS (in millimeter) 1.0 15.7 MAX. 4 3.2±0.2 4.7 MAX. 1.5 FEATURES 2SK2368: RDS (on) = 0.6 Ω (VGS = 10 V, ID = 8.0 A) ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage (2SK2367/2SK2368) Gate to Source Voltage Drain Current (DC) Drain Current (pulse)* Total Power Dissipation (Tc = 25 ˚C) Total Power Dissipation (TA = 25 ˚C) Channel Temperature Storage Temperature Single Avalanche Current** Single Avalanche Energy** * PW ≤ 10 µs, Duty Cycle ≤ 1 % VDSS VGSS ID (DC) ID (pulse) PT1 PT2 Tch Tstg IAS EAS 450/500 ± 30 ± 15 ± 60 120 3.0 150 15 161 V V A A W W ˚C A mJ 19 MIN. 3.0±0.2 Low Ciss Ciss = 1 600 pF TYP. High Avalanche Capability Ratings 1 2 3 2.2±0.2 5.45 1.0±0.2 5.45 4.5±0.2 2SK2367: RDS (on) = 0.5 Ω (VGS = 10 V, ID = 8.0 A) 20.0±0.2 6.0 0.6±0.1 2.8±0.1 1. Gate 2. Drain 3. Source 4. Fin (Drain) MP-88 Drain –55 to +150 ˚C Body Diode Gate ** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0 Source Document No. TC-2506 (O. D. No. TC-8065) Date Published December 1994 P Printed in Japan © 7.0 Low On-Resistance 1995 1994 Free Datasheet http://www.datasheet4u.net/ 2SK2367/2SK2368 ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) CHARACTERISTIC Drain to Source On-Resistance SYMBOL RDS (on) MIN. TYP. 0.4 0.5 Ga...