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K13A60D Dataheets PDF



Part Number K13A60D
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description TK13A60D
Datasheet K13A60D DatasheetK13A60D Datasheet (PDF)

TK13A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK13A60D Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 0.33 Ω (typ.) High forward transfer admittance: |Yfs| = 6.5 S (typ.) Low leakage current: IDSS = 10 μA (VDS = 600 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage DC Drain current (Note 1) Symbol VDSS VGSS ID I.

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TK13A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK13A60D Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 0.33 Ω (typ.) High forward transfer admittance: |Yfs| = 6.5 S (typ.) Low leakage current: IDSS = 10 μA (VDS = 600 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage DC Drain current (Note 1) Symbol VDSS VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 600 ±30 13 52 50 511 13 5.0 150 -55 to 150 A W mJ A mJ °C °C 1: Gate 2: Drain 3: Source Unit V V Pulse (t = 1 ms) (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA ― SC-67 2-10U1B Weight : 1.7 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics 2 Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 2.5 62.5 Unit °C/W °C/W 1 Note 1: Ensure that the channel temperature does not exceed 150℃. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 5.3 mH, RG = 25 Ω, IAR = 13 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. 3 1 2008-09-16 Free Datasheet http://www.datasheet4u.net/ TK13A60D Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON-resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge Gate-source charge Gate-drain charge tf toff Qg Qgs Qgd VDD ≈ 400 V, VGS = 10 V, ID = 13 A Duty ≤ 1%, tw = 10 μs Symbol IGSS IDSS V (BR) DSS Vth RDS (ON) ⎪Yfs⎪ Ciss Crss Coss tr ton 10 V VGS 0V 50 Ω ID = 6.5 A VOUT VDS = 25 V, VGS = 0 V, f = 1 MHz Test Condition VGS = ±30 V, VDS = 0 V VDS = 600 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 6.5 A VDS = 10 V, ID = 6.5 A Min ⎯ ⎯ 600 2.0 ⎯ 1.8 ⎯ ⎯ Typ. ⎯ ⎯ ⎯ ⎯ 0.33 6.5 2300 10 250 50 100 25 140 40 25 15 Max ±1 10 ⎯ 4.0 0.43 ⎯ ⎯ ⎯ pF Unit μA μA V V Ω S ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ns RL = 30 Ω VDD ≈ 200 V ⎯ ⎯ ⎯ ⎯ ⎯ nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1) Symbol IDR IDRP VDSF trr Qrr Test Condition ⎯ ⎯ IDR = 13 A, VGS = 0 V IDR = 13 A, VGS = 0 V, dIDR/dt = 100 A/μs Min ⎯ ⎯ ⎯ ⎯ ⎯ Typ. ⎯ ⎯ ⎯ 1600 20 Max 13 52 −1.7 ⎯ ⎯ Unit A A V ns μC Marking K13A60D Part No. (or abbreviation code) Lot No. A line indicates Lead(Pb)-Free Finish 2 2008-09-16 Free Datasheet http://www.datasheet4u.net/ TK13A60D ID – VDS 20 COMMON SOURCE Tc = 25°C PULSE TEST 10 8 30 10 9.0 ID – VDS 8.0 COMMON SOURCE Tc = 25°C PULSE TEST (A) 16 (A) 25 7.5 20 7.0 DRAIN CURRENT ID 12 6.5 8 6.0 4 5.5 VGS = 5V 0 0 2 4 6 8 10 DRAIN CURRENT ID 15 7.0 6.5 10 6.0 5 VGS = 5.5V 0 0 10 20 30 40 50 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V) ID – VGS COMMON SOURCE VDS = 20 V 25 PULSE TEST 20 VDS – VGS 10 VDS (V) 30 (A) 8 COMMON SOURCE Tc = 25℃ PULSE TEST DRAIN CURRENT ID DRAIN-SOURCE VOLTAGE 6 ID = 13 A 15 4 10 Tc = 100°C 5 Tc = 25°C Tc = −55°C 0 0 2 4 6 8 10 2 6.5 3 0 0 4 8 12 16 20 GATE-SOURCE VOLTAGE VGS (V) GATE-SOURCE VOLTAGE VGS (V) ⎪Yfs⎪ – ID FORWARD TRANSFER ADMITTANCE ⎪Yfs⎪ (S) 100 RDS (ON) – ID 1 DRAIN-SOURCE ON RESISTANCE RDS (ON) (Ω) COMMON SOURCE VDS = 20 V PULSE TEST 10 100 25 Tc = −55°C 1 VGS = 10 V、15 V 0.1 COMMON SOURCE Tc = 25°C PULSE TEST 0.01 0.1 1 10 100 0.1 0.1 1 10 100 DRAIN CURRENT ID (A) DRAIN CURRENT ID (A) 3 2008-09-16 Free Datasheet http://www.datasheet4u.net/ TK13A60D RDS (ON) – Tc (A) 1.2 100 IDR – VDS COMMON SOURCE Tc = 25°C PULSE TEST DRAIN-SOURCE ON RESISTANCE RDS (ON) ( Ω) COMMON SOURCE 1.0 VGS = 10 V PULSE TEST DRAIN REVERSE CURRENT IDR 0.8 ID = 13A 0.6 3 6.5 10 0.4 1 10 5 3 1 VGS = 0, −1 V −0.6 −0.8 −1 −1.2 0.2 0 −80 −40 0 40 80 120 160 0.1 0 −0.2 −0.4 CASE TEMPERATURE Tc (°C) DRAIN-SOURCE VOLTAGE VDS (V) CAPACITANCE.


CSC9803 K13A60D C2929


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