40N10 DTU40N10 Datasheet

40N10 Datasheet, PDF, Equivalent


Part Number

40N10

Description

DTU40N10

Manufacture

DinTek

Total Page 8 Pages
Datasheet
Download 40N10 Datasheet


40N10
N-Channel 100-V (D-S) MOSFET
DT81
www.din-tek.jp
PRODUCT SUMMARY
V(BR)DSS (V)
rDS(on) (Ω)
100 0.030 at VGS = 10 V
0.034 at VGS = 6 V
ID (A)
40
37.5
FEATURES
• TrenchFET® Power MOSFETS
• 175 °C Junction Temperature
• Low Thermal Resistance Package
TO-252
D
GDS
Top View
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 175 °C)
TC = 25 °C
TC = 125 °C
ID
Pulsed Drain Current
IDM
Avalanche Current
IAR
Repetitive Avalanche Energya
L = 0.1 mH
EAR
Maximum Power Dissipationa
TC = 25 °C
TA = 25 °Cc
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
Junction-to-Case (Drain)
Notes:
a. Duty cycle 1 %.
b. See SOA curve for voltage derating.
c. When Mounted on 1" square PCB (FR-4 material).
(PCB Mount)c
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Symbol
RthJA
RthJC
Limit
100
± 20
40
23
75
35
61
107b
3.75
- 55 to 175
Limit
40
1.4
Available
RoHS*
COMPLIANT
Unit
V
A
mJ
W
°C
Unit
°C/W
1
Free Datasheet http://www.datasheet4u.net/

40N10
DT81
www.din-tek.jp
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Dynamicb
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSS = 0 V, ID = 250 µA
VDS = VGS, ID = 250 µA
VDS = 0 V, VGS = ± 20 V
VDS = 80 V, VGS = 0 V
VDS = 80 V, VGS = 0 V, TJ = 125 °C
VDS = 80 V, VGS = 0 V, TJ = 175 °C
VDS 5 V, VGS = 10 V
VGS = 10 V, ID = 15 A
VGS = 6 V, ID = 10 A
VGS = 10 V, ID = 15 A, TJ = 125 °C
VGS = 10 V, ID = 15 A, TJ = 175 °C
VDS = 15 V, ID = 15 A
Input Capacitance
Ciss
Output Capacitance
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Chargec
Qg
Gate-Source Chargec
Qgs VDS = 50 V, VGS = 10 V, ID = 40 A
Gate-Drain Chargec
Qgd
Gate Resistance
RG
Turn-On Delay Timec
td(on)
Rise Timec
Turn-Off Delay Timec
tr
td(off)
VDD = 50 V, RL = 1.25 Ω
ID 40 A, VGEN = 10 V, RG = 2.5 Ω
Fall Timec
tf
Source-Drain Diode Ratings and Characteristics TC = 25 °Cb
Continuous Current
IS
Pulsed Current
ISM
Forward Voltagea
VSD IF = 30 A, VGS = 0 V
Reverse Recovery Time
trr
Peak Reverse Recovery Current
IRM(REC)
IF = 30 A, di/dt = 100 A/µs
Reverse Recovery Charge
Qrr
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Min.
100
2
75
10
Typ.
Max.
4
± 100
1
50
250
0.024
0.026
0.030
0.034
0.054
0.067
2400
270
90
35
11
9
1.7
11
12
30
12
1.0
60
5
0.15
60
20
20
45
20
40
75
1.5
100
8
0.4
Unit
V
nA
µA
A
Ω
S
pF
nC
Ω
ns
A
V
ns
A
µC
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2
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Features www.din-tek.jp DT81 N-Channel 100- V (D-S) MOSFET PRODUCT SUMMARY V(BR)DS S (V) 100 rDS(on) (Ω) 0.030 at VGS = 1 0 V 0.034 at VGS = 6 V ID (A) 40 37.5 FEATURES • TrenchFET® Power MOSFETS • 175 °C Junction Temperature • Lo w Thermal Resistance Package Available RoHS* COMPLIANT D TO-252 G G D S Top View S N-Channel MOSFET ABSOLUT E MAXIMUM RATINGS TC = 25 °C, unless o therwise noted Parameter Drain-Source V oltage Gate-Source Voltage Continuous D rain Current (TJ = 175 °C) Pulsed Drai n Current Avalanche Current Repetitive Avalanche Energya Maximum Power Dissipa tiona Operating Junction and Storage Te mperature Range L = 0.1 mH TC = 25 °C TA = 25 °Cc TC = 25 °C TC = 125 °C S ymbol VDS VGS ID IDM IAR EAR PD TJ, Tst g Limit 100 ± 20 40 23 75 35 61 107 b Unit V A mJ W °C 3.75 - 55 to 175 THERMAL RESISTANCE RATINGS Parameter J unction-to-Ambient Junction-to-Case (Dr ain) Notes: a. Duty cycle ≤ 1 %. b. S ee SOA curve for voltage derating. c. When Mounted on 1" square PCB (FR-4 material.
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