DIGITAL AUDIO MOSFET
DIGITAL AUDIO MOSFET
Features
IRFI4019H-117P
Key Parameters h
150 80 13 4.1 2.5 150 V m: nC nC Ω °C
PD - 97074A
...
Description
DIGITAL AUDIO MOSFET
Features
IRFI4019H-117P
Key Parameters h
150 80 13 4.1 2.5 150 V m: nC nC Ω °C
PD - 97074A
Integrated Half-Bridge Package Reduces the Part Count by Half Facilitates Better PCB Layout Key Parameters Optimized for Class-D Audio Amplifier Applications Low RDS(ON) for Improved Efficiency Low Qg and Qsw for Better THD and Improved Efficiency Low Qrr for Better THD and Lower EMI Can Delivery up to 200W per Channel into 8Ω Load in Half-Bridge Configuration Amplifier Lead-Free Package
VDS RDS(ON) typ. @ 10V Qg typ. Qsw typ. RG(int) typ. TJ max
G1 S1/D2 G2 S2
D1
TO-220 Full-Pak 5 PIN
G1, G2 D1, D2 S1, S2
Description
Gate
Drain
Source
This Digital Audio MosFET Half-Bridge is specifically designed for Class D audio amplifier applications. It consists of two power MosFET switches connected in half-bridge configuration. The latest process is used to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery, and internal Gate resistance are optimized to improve key Class D audio amplifier performance factors such as efficiency, THD and EMI. These combine to make this Half-Bridge a highly efficient, robust and reliable device for Class D audio amplifier applications. Absolute Maximum Ratings h
Parameter
VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM EAS PD @TC = 25°C PD @TC = 100°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 1...
Similar Datasheet