C4371

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4371 DESCRIPTION ·High Collector-Emitter Breakdown Voltage: V(BR)CEO= 400(Min) ·Excellent Switching Times: tr= 1.0μs(Max), tf= 1.0μs(Max)@ IC= 4A APPLICATIONS ·Switching regulator application ·High voltage switching application ·High Speed DC-DC converter application ·Fluorescent light ballastor application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC ICM Collector Current-Continuous 5 A Collector Current-Peak 7 A IB B Base Current-Continuous Collector Power Dissipation @Ta=25℃ 1 A 2 W PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 30 150 ℃ ℃ Tstg Storage Temperature Range -55~150 isc Website：www.iscsemi.cn Free Datasheet http://www.datasheet4u.net/ INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO VCE(sat) VBE(sat) ICBO IEBO hFE-1 hFE-2 PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Gurrent Gain CONDITIONS IC= 10mA ; IB= 0 IC= 1mA ; IE= 0 IC= 5A; IB= 1A B 2SC4371 MIN 400 500 TYP. MAX UNIT V V 1.0 1.5 100 1 12 8 V V μA mA IC= 5A; IB...