INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC4371
DESCRIPTION ·High Collecto...
INCHANGE Semiconductor
isc Product Specification
isc Silicon
NPN Power
Transistor
2SC4371
DESCRIPTION ·High Collector-Emitter Breakdown Voltage: V(BR)CEO= 400(Min) ·Excellent Switching Times: tr= 1.0μs(Max), tf= 1.0μs(Max)@ IC= 4A APPLICATIONS ·Switching
regulator application ·High voltage switching application ·High Speed DC-DC converter application ·Fluorescent light ballastor application ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER VALUE UNIT
VCBO
Collector-Base Voltage
500
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
7
V
IC ICM
Collector Current-Continuous
5
A
Collector Current-Peak
7
A
IB
B
Base Current-Continuous Collector Power Dissipation @Ta=25℃
1
A
2 W
PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 30
150
℃ ℃
Tstg
Storage Temperature Range
-55~150
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Free Datasheet http://www.datasheet4u.net/
INCHANGE Semiconductor
isc Product Specification
isc Silicon
NPN Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO VCE(sat) VBE(sat) ICBO IEBO hFE-1 hFE-2 PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Gurrent Gain CONDITIONS IC= 10mA ; IB= 0 IC= 1mA ; IE= 0 IC= 5A; IB= 1A
B
2SC4371
MIN 400 500
TYP.
MAX
UNIT V V
1.0 1.5 100 1 12 8
V V μA mA
IC= 5A; IB...