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2SK3868
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI)
2SK3868
Switching Regulator Applications
• • • • Low drain-source ON resistance: RDS (ON) = 1.3 Ω (typ.) High forward transfer admittance: |Yfs| = 3 S (typ.) Low leakage current: IDSS = 100 μA (VDS = 500 V) Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage DC Drain current (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 500 500 ±30 5 20 35 180 5 3.5 150 -55 to 150 A W mJ A mJ °C °C Unit V V V
Pulse (t = 1 ms) (Note 1)
Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range
1: Gate 2: Drain 3: Source
JEDEC JEITA TOSHIBA
― SC-67 2-10U1B
Weight: 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
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Characteristic Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 3.57 62.5 Unit °C/W °C/W
Note 1: Ensure that the channel temperature does not exceed 150℃. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 12.2 mH, IAR = 5 A, RG = 25 Ω Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care.
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2SK3868
Electrical Characteristics (Ta = 25°C)
Characteristic Gate leakage current Gate-source breakdown voltage Drain cutoff current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge Gate-source charge Gate-drain charge tf toff Qg Qgs Qgd VDD ∼ − 400 V, VGS = 10 V, ID = 5 A VDD ∼ − 225 V Duty ≤ 1%, tw = 10 μs Symbol IGSS V (BR) GSS IDSS V (BR) DSS Vth RDS (ON) ⎪Yfs⎪ Ciss Crss Coss tr ton 10 V VGS 0V 15 Ω ID = 2.5 A VOUT RL = 90 Ω VDS = 25 V, VGS = 0 V, f = 1 MHz Test Condition VGS = ±25 V, VDS = 0 V IG = ±10 μA, VDS = 0 V VDS = 500 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 2.5 A VDS = 10 V, ID = 2.5 A Min ⎯ ±30 ⎯ 500 2.0 ⎯ 1.5 ⎯ ⎯ Typ. ⎯ ⎯ ⎯ ⎯ ⎯ 1.3 3.0 550 7 70 10 20 10 50 16 10 6 Max ±10 ⎯ 100 ⎯ 4.0 1.7 ⎯ ⎯ ⎯ pF Unit μA V μA V V Ω S
⎯ ⎯ ⎯ ⎯
⎯ ⎯ ⎯ ⎯
⎯ ⎯ ⎯
ns
⎯ ⎯
⎯ ⎯ ⎯ nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristic Continuous drain reverse current (Note 1) Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1) Symbol IDR IDRP VDSF trr Qrr Test Condition ⎯ ⎯ IDR = 5 A, VGS = 0 V IDR = 5 A, VGS = 0 V, dIDR/dt = 100 A/μs Min ⎯ ⎯ ⎯ ⎯ ⎯ Typ. ⎯ ⎯ ⎯ 150 0.3 Max 5 20 −1.7 ⎯ ⎯ Unit A A V ns μC
Marking
Note 4: A line under a Lot No. identifies the indication of product Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] K3868
Part No. (or abbreviation code) Lot No. Note 4
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.
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2SK3868
ID – VDS
5 COMMON SOURCE Tc = 25°C PULSE TEST 6 3 10 10 5.5 COMMON SOURCE Tc = 25°C PULSE TEST
ID – VDS
10
(A)
(A)
4
5.25
8
6
DRAIN CURRENT ID
DRAIN CURRENT ID
5
6 5.5 4 5.25 5 2 4.75 4.5 VGS = 4 V 4 8 12 16 20 24
2
4.75 4.5 VGS = 4 V
1
0 0
2
4
6
8
10
12
0 0
DRAIN-SOURCE VOLTAGE
VDS
(V)
DRAIN-SOURCE VOLTAGE
VDS
(V)
ID – VGS VDS (V)
10 COMMON SOURCE 20
VDS – VGS
COMMON SOURCE Tc = 25℃ 16 PULSE TEST
(A)
8
VDS = 20 V PULSE TEST 25
DRAIN CURRENT ID
6 Tc = −55°C 4 100 2
DRAIN-SOURCE VOLTAGE
12
8
ID = 5 A
4
2.5 1.2
0 0
2
4
6
8
10
0 0
4
8
12
16
20
GATE-SOURCE VOLTAGE
VGS
(V)
GATE-SOURCE VOLTAGE
VGS
(V)
⎪Yfs⎪ – ID FORWARD TRANSFER ADMITTANCE ⎪Yfs⎪ (S)
10 VDS = 10 V PULSE TEST 100 25 10
RDS (ON) – ID DRAIN-SOURCE ON RESISTANCE RDS (ON) (mΩ)
COMMON SOU.