PC28F00AG18xx

128Mb, 256Mb, 512Mb, 1Gb StrataFlash Memory Features Micron StrataFlash Embedded Memory P/N P/N P/N P/N – – – – PC28F128G18xx PC28F256G18xx PC28F512G18xx PC28F00AG18xx Power – Core voltage: 1.7 V - 2.0 V – I/O voltage: 1.7 V - 2.0 V – Standby current: 60 μA (typ) for 512-Mbit, 65 nm – Deep Power-Down mode: 2 μA (typ) – Automatic Power Savings mode – 16-word synchronous-burst read current: 23 mA (typ) @ 108 MHz; 24 mA (typ) @ 133 MHz Software – Micron® Flash data integrator (FDI) optimized – Basic command set (BCS) and extended command set (ECS) compatible – Common Flash interface (CFI) capable Security – One-time programmable (OTP) space 64 unique factory device identifier bits 2112 user-programmable OTP bits – Absolute write protection: V PP = GND – Power-transition erase/program lockout – Individual zero latency block locking – Individual block lock-down Density and packaging – 128Mb, 256Mb, 512Mbit, and 1-Gbit – Address-data multiplexed and non-multiplexed interfaces – 64-Ball Easy BGA Features High-Performance Read, Program and Erase – 96 ns initial read access – 108 MHz with zero wait-state synchronous burst reads: 7 ns clock-to-data output – 133 MHz with zero wait-state synchronous burst reads: 5.5 ns clock-to-data output – 8-, 16-, and continuous-word synchronous-burst Reads – Programmable WAIT configuration – Customer-configurable output driver impedance – Buffered Programming: 2.0 μs/Word (typ), 512Mbit 65 nm – Block Erase: 0.9 s per block (typ) – 20 μs (...