SPP11N80C3 SPA11N80C3 Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology • Ultra low gate ch...
SPP11N80C3 SPA11N80C3 Cool MOS™ Power
Transistor
Feature New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductance
P-TO220-3-31
1 2 3
VDS RDS(on) ID
800 0.45 11
V Ω A
PG-TO220-3-31 PG-TO220
PG-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)
Type SPP11N80C3 SPA11N80C3
Package PG-TO220
Ordering Code Q67040-S4438
Marking 11N80C3 11N80C3
PG-TO220-3-31 SP000216320
Maximum Ratings Parameter Continuous drain current
TC = 25 °C TC = 100 °C
Symbol SPP ID 11 7.1 ID puls EAS EAR IAR VGS VGS Ptot Tj , Tstg
Page 1
Value SPA
Unit A 111) 7.11) 33 470 0.2 11 ±20 ±30 41 W °C A V A mJ
Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse
ID=2.2A, VDD=50V
33 470 0.2 11 ±20 ±30 156
Avalanche energy, repetitive tAR limited by Tjmax2)
ID=11A, VDD=50V
Avalanche current, repetitive tAR limited by Tjmax Gate source voltage Gate source voltage AC (f >1Hz) Power dissipation, TC = 25°C Operating and storage temperature
-55...+150
Rev. 2.4
2005-08-24
Free Datasheet http://www.datasheet4u.net/
SPP11N80C3 SPA11N80C3
Maximum Ratings Parameter Drain Source voltage slope
VDS = 640 V, ID = 11 A, Tj = 125 °C
Symbol dv/dt
Value 50
Unit V/ns
Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - case, FullPAK Thermal resistance, junction - ambient, leaded Thermal resistance, junction - ambient...