DatasheetsPDF.com

F08S60SNTU Dataheets PDF



Part Number F08S60SNTU
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description STEALTH II Rectifier
Datasheet F08S60SNTU DatasheetF08S60SNTU Datasheet (PDF)

FFPF08S60SN May 2008 FFPF08S60SN Features • High Speed Switching, trr < 25ns @ IF = 8A • High Reverse Voltage and High Reliability • RoHS compliant STEALTHTM II Rectifier tm 8A, 600V STEALTHTM II Rectifier The FFPF08S60SN is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as freewheeling of boost diode in switching power supplies and other power swithching applications. Th.

  F08S60SNTU   F08S60SNTU


Document
FFPF08S60SN May 2008 FFPF08S60SN Features • High Speed Switching, trr < 25ns @ IF = 8A • High Reverse Voltage and High Reliability • RoHS compliant STEALTHTM II Rectifier tm 8A, 600V STEALTHTM II Rectifier The FFPF08S60SN is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as freewheeling of boost diode in switching power supplies and other power swithching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. Applications • General Purpose • Switching Mode Power Supply • Boost Diode in continuous mode power factor corrections • Power switching circuits TO-220F-2L 1. Cathode 2. Anode 1. Cathode 2. Anode Absolute Maximum Ratings TC = 25oC unless otherwise noted Symbol VRRM VRWM VR IF(AV) IFSM TJ, TSTG Parameter Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current Non-repetitive Peak Surge Current 60Hz Single Half-Sine Wave Operating and Storage Temperature Range @ TC = 60oC Ratings 600 600 600 8 60 -65 to +150 Units V V V A A o C Thermal Characteristics Symbol RθJC Parameter Maximum Thermal Resistance, Junction to Case Ratings 6.8 Units o C/W Package Marking and Ordering Information Device Marking F08S60SN Device FFPF08S60SNTU Package TO220F-2L Reel Size - Tape Width - Quantity 50 ©2008 Fairchild Semiconductor Corporation FFPF08S60SN Rev. A 1 www.fairchildsemi.com Free Datasheet http://www.datasheet4u.net/ FFPF08S60SN Electrical Characteristics TC = 25oC unless otherwise noted Symbol VFM1 IRM1 trr trr Irr S factor Qrr trr Irr S factor Qrr WAVL IF = 8A IF = 8A VR = 600V VR = 600V IF = 1A, di/dt = 100A/μs, VR = 30V IF = 8A, di/dt = 200A/μs, VR = 390V Parameter TC = 25oC TC = 125oC TC = 25oC TC = 125oC TC = 25oC TC = 25 C o Min. 10 Typ. 2.7 2.1 13 15 2.5 0.4 19 32 3.8 0.7 62 - Max. 3.4 100 500 25 - Units V μA ns ns A nC ns A nC mJ IF = 8A, di/dt = 200A/μs, VR = 390V Avalanche Energy ( L = 40mH) TC = 125oC Notes: 1: Pulse: Test Pulse width = 300μs, Duty Cycle = 2% Trr test circuit and waveform Avalanch energy test circuit and waveform FFPF08S60SN Rev. A 2 www.fairchildsemi.com Free Datasheet http://www.datasheet4u.net/ FFPF08S60SN Typical Performance Characteristics Figure 1. Typical Forward Voltage Drop vs. Forward Current 20 10 Reverse Current , IR [μA] Forward Current, IF [A] TC = 125 C TC = 75 C o o Figure 2. Typical Reverse Current vs. Reverse Voltage 40 10 TC = 125 C o 1 TC = 75 C o 1 TC = 25 C o 0.1 0.01 TC = 25 C o 0.1 0 1 2 3 4 Forward Voltage, VF [V] 5 0.001 10 100 200 300 400 Reverse Voltage, VR [V] 500 600 Figure 3.Typical Junction Capacitance 50 Figure 4. Typical Reverse Recovery Time vs. di/dt 40 Reverse Recovery Time, trr [ns] IF = 8A Typical Capacitance at 0V = 43 pF 40 Capacitances , Cj [pF] 30 TC = 125 C o 30 20 TC = 75 C o 20 TC = 25 C o 10 0 0.1 1 10 Reverse Voltage, VR [V] 100 10 100 200 300 400 di/dt [A/μs] 500 600 Figure 5. Typical Reverse Recovery Current vs. di/dt 10 Reverse Recovery Current, Irr [A] Figure 6. Forward Current Derating Curve 12 Average Forward Current, IF(AV) [A] 8 9 6 TC = 125 C o 6 4 TC = 25 C o TC = 75 C o 3 2 0 100 IF = 8A 200 300 400 di/dt [A/μs] 500 600 0 25 50 75 100 125 o Case temperature, TC [ C] 150 FFPF08S60SN Rev. A 3 www.fairchildsemi.com Free Datasheet http://www.datasheet4u.net/ FFPF08S60SN Mechanical Dimensions TO220F 2L 10.16 ±0.20 ø3.18 ±0.10 2.54 ±0.20 (0.70) 3.30 ±0.10 6.68 ±0.20 15.80 ±0.20 (1.00x45°) (6.50) (1.80) 9.75 ±0.30 12.00 ±0.20 MAX1.47 0.80 ±0.10 2.76 ±0.20 0.35 ±0.10 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20] +0.10 0.50 –0.05 9.40 ±0.20 4.70 ±0.20 Dimensions in Millimeters FFPF08S60SN Rev. A 15.87 ±0.20 www.fairchildsemi.com 4 Free Datasheet http://www.datasheet4u.net/ FFPF08S60SN TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. ACEx® Build it Now™ CorePLUS™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® EZSWITCH™ * ™ ® Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FlashWriter® * FPS™ FRFET® Global Power ResourceSM Green FPS™ Green FPS™ e-Series™ GTO™ i-Lo™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® ® tm PDP-SPM™ Power220® POWEREDGE® Power-SPM™ PowerTrench® Programmable Active Droop™ QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS™ SyncFET™ ® The Power Franchise® tm TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWi.


APL1581 F08S60SNTU FFPF08S60SN


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)