Document
FFPF08S60SN
May 2008
FFPF08S60SN
Features
• High Speed Switching, trr < 25ns @ IF = 8A • High Reverse Voltage and High Reliability • RoHS compliant
STEALTHTM II Rectifier
tm
8A, 600V STEALTHTM II Rectifier
The FFPF08S60SN is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as freewheeling of boost diode in switching power supplies and other power swithching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors.
Applications
• General Purpose • Switching Mode Power Supply • Boost Diode in continuous mode power factor corrections • Power switching circuits
TO-220F-2L 1. Cathode 2. Anode
1. Cathode
2. Anode
Absolute Maximum Ratings TC = 25oC unless otherwise noted
Symbol VRRM VRWM VR IF(AV) IFSM TJ, TSTG Parameter Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current Non-repetitive Peak Surge Current 60Hz Single Half-Sine Wave Operating and Storage Temperature Range @ TC = 60oC Ratings 600 600 600 8 60 -65 to +150 Units V V V A A
o
C
Thermal Characteristics
Symbol RθJC Parameter Maximum Thermal Resistance, Junction to Case Ratings 6.8 Units
o
C/W
Package Marking and Ordering Information
Device Marking
F08S60SN
Device
FFPF08S60SNTU
Package
TO220F-2L
Reel Size
-
Tape Width
-
Quantity
50
©2008 Fairchild Semiconductor Corporation FFPF08S60SN Rev. A
1
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.net/
FFPF08S60SN
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol VFM1 IRM1 trr trr Irr S factor Qrr trr Irr S factor Qrr WAVL IF = 8A IF = 8A VR = 600V VR = 600V IF = 1A, di/dt = 100A/μs, VR = 30V IF = 8A, di/dt = 200A/μs, VR = 390V Parameter TC = 25oC TC = 125oC TC = 25oC TC = 125oC TC = 25oC TC = 25 C
o
Min. 10
Typ. 2.7 2.1 13 15 2.5 0.4 19 32 3.8 0.7 62 -
Max. 3.4 100 500 25 -
Units V μA ns ns A nC ns A nC mJ
IF = 8A, di/dt = 200A/μs, VR = 390V Avalanche Energy ( L = 40mH)
TC = 125oC
Notes: 1: Pulse: Test Pulse width = 300μs, Duty Cycle = 2%
Trr test circuit and waveform
Avalanch energy test circuit and waveform
FFPF08S60SN Rev. A
2
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.net/
FFPF08S60SN
Typical Performance Characteristics
Figure 1. Typical Forward Voltage Drop vs. Forward Current
20 10
Reverse Current , IR [μA]
Forward Current, IF [A]
TC = 125 C TC = 75 C
o o
Figure 2. Typical Reverse Current vs. Reverse Voltage
40 10
TC = 125 C
o
1
TC = 75 C
o
1
TC = 25 C
o
0.1
0.01
TC = 25 C
o
0.1 0 1 2 3 4 Forward Voltage, VF [V] 5
0.001
10
100
200 300 400 Reverse Voltage, VR [V]
500
600
Figure 3.Typical Junction Capacitance
50
Figure 4. Typical Reverse Recovery Time vs. di/dt
40
Reverse Recovery Time, trr [ns]
IF = 8A
Typical Capacitance at 0V = 43 pF
40 Capacitances , Cj [pF]
30
TC = 125 C
o
30
20
TC = 75 C
o
20
TC = 25 C
o
10
0 0.1
1 10 Reverse Voltage, VR [V]
100
10 100
200
300 400 di/dt [A/μs]
500
600
Figure 5. Typical Reverse Recovery Current vs. di/dt
10
Reverse Recovery Current, Irr [A]
Figure 6. Forward Current Derating Curve
12
Average Forward Current, IF(AV) [A]
8
9
6
TC = 125 C
o
6
4
TC = 25 C
o
TC = 75 C
o
3
2
0 100
IF = 8A
200
300 400 di/dt [A/μs]
500
600
0 25
50
75 100 125 o Case temperature, TC [ C]
150
FFPF08S60SN Rev. A
3
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.net/
FFPF08S60SN
Mechanical Dimensions
TO220F 2L
10.16 ±0.20 ø3.18 ±0.10 2.54 ±0.20 (0.70)
3.30 ±0.10
6.68 ±0.20
15.80 ±0.20
(1.00x45°)
(6.50)
(1.80)
9.75 ±0.30
12.00 ±0.20
MAX1.47 0.80 ±0.10
2.76 ±0.20
0.35 ±0.10 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20]
+0.10
0.50 –0.05
9.40 ±0.20
4.70 ±0.20
Dimensions in Millimeters
FFPF08S60SN Rev. A
15.87 ±0.20
www.fairchildsemi.com
4
Free Datasheet http://www.datasheet4u.net/
FFPF08S60SN
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. ACEx® Build it Now™ CorePLUS™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® EZSWITCH™ *
™
®
Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FlashWriter® *
FPS™ FRFET® Global Power ResourceSM Green FPS™ Green FPS™ e-Series™ GTO™ i-Lo™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR®
®
tm
PDP-SPM™ Power220® POWEREDGE® Power-SPM™ PowerTrench® Programmable Active Droop™ QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8
SupreMOS™ SyncFET™ ® The Power Franchise®
tm
TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWi.