HGT1S12N60A4S9A

HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A Data Sheet August 2003 600V, SMPS Series N-Channel IGBTs The HGTP12N60A4, HGTG12N60A4 and HGT1S12N60A4S9A are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies. Formerly Developmental Type TA49335. Features >100kHz Operation at 390V, 12A 200kHz Operation at 390V, 9A 600V Switching SOA Capability Typical Fall Time. . . . . . . . . . . . . . . . . 70ns at TJ = 125oC Low Conduction Loss Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards Packaging JEDEC TO-220AB ALTERNATE VERSION BRAND Ordering Information PART NUMBER HGTP12N60A4 HGTG12N60A4 HGT1S12N60A4S9A PACKAGE TO-220AB TO-247 TO-263AB 12N60A4 12N60A4 12N60A4 COLLECTOR (FLANGE) E C G NOTE: When ordering, use the entire part number. Symbol C JEDEC TO-263AB G G E COLLECTOR (FLANGE) JEDEC STYLE TO-247 E E C G COLLECTOR (BOTTOM SIDE METAL) FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,80...