HGT1S12N60B3DS

HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS Data Sheet January 2000 File Number 4411.2 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49171. The diode used in anti-parallel with the IGBT is the development type TA49188. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly developmental type TA49173. Features 27A, 600V, TC = 25oC 600V Switching SOA Capability Typical Fall Time. . . . . . . . . . . . . . . . 112ns at TJ = 150oC Short Circuit Rating Low Conduction Loss Hyperfast Anti-Parallel Diode Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards Packaging JEDEC TO-220AB (ALTERNATE VERSION) E COLLECTOR (FLANGE) C G Ordering Information PART NUMBER HGTP12N60B3D HGTG12N60B3D HGT1S12N60B3DS PACKAGE TO-220AB TO-247 TO-263AB BRAND 12N60B3D 12N60B3D 12N60B3D JEDEC TO-263AB NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the T...