| DatasheetsPDF.com |
C5899 Datasheet, Equivalent, 2SC5899.2SC5899 2SC5899 |
　
　
　
| Part | C5899 |
|---|---|
| Description | 2SC5899 |
| Feature | Ordering number : ENN7538
2SC5899
www. D ataSheet4U. com NPN Triple Diffused Plan ar Silicon Transistor 2SC5899 Ultrahig h-Definition CRT Display Horizontal Def lection Output Applications Features †¢ • • • Package Dimensions unit : mm 2174A [2SC5899] 16. 0 3. 4 5. 6 3. 1 High speed. High breakdown voltage(VCBO =1700V). High reliability(Adoption of H VP process). Adoption of MBIT process. 5. 0 21. 0 4. 0 22. 0 8. 0 2. 8 2. 0 20. 4 0. 7 0. 9 1 2 5. 45 3 Specificatio ns Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Co llector-to-Emitter Voltage Emitter-to-B ase Voltage Collector C . |
| Manufacture | Sanyo Semicon Device |
| Datasheet |
| Part | C5899 |
|---|---|
| Description | 2SC5899 |
| Feature | Ordering number : ENN7538
2SC5899
www. D ataSheet4U. com NPN Triple Diffused Plan ar Silicon Transistor 2SC5899 Ultrahig h-Definition CRT Display Horizontal Def lection Output Applications Features †¢ • • • Package Dimensions unit : mm 2174A [2SC5899] 16. 0 3. 4 5. 6 3. 1 High speed. High breakdown voltage(VCBO =1700V). High reliability(Adoption of H VP process). Adoption of MBIT process. 5. 0 21. 0 4. 0 22. 0 8. 0 2. 8 2. 0 20. 4 0. 7 0. 9 1 2 5. 45 3 Specificatio ns Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Co llector-to-Emitter Voltage Emitter-to-B ase Voltage Collector C . |
| Manufacture | Sanyo Semicon Device |
| Datasheet |
　
　
| @ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact) |