HGT1S1N120BNDS

HGTP1N120BND, HGT1S1N120BNDS Data Sheet January 2000 File Number 4650.2 5.3A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTP1N120BND and the HGT1S1N120BNDS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is development type number TA49316. The diode used in anti-parallel with the IGBT is the RHRD4120 (TA49056). The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly Developmental Type TA49314. Features 5.3A, 1200V, TC = 25oC 1200V Switching SOA Capability Typical EOFF. . . . . . . . . . . . . . . . . . . 120µJ at TJ = 150oC Short Circuit Rating Low Conduction Loss Temperature Compensating SABER™ Model Thermal Impedance SPICE Model www.intersil.com/ Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Packaging JEDEC TO-220AB E C G COLLECTOR Ordering Information PART NUMBER HGTP1N120BND HGT1S1N120BNDS PACKAGE TO-220AB TO-263AB BRAND 1N120BND 1N120BND (FLANGE) NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-2...