VS-FB190SA10

VS-FB190SA10 www.vishay.com Vishay Semiconductors Power MOSFET, 190 A FEATURES Fully isolated package Very low on-resistance Fully avalanche rated Dynamic dV/dt rating Low drain to case capacitance Low internal inductance Optimized for SMPS applications SOT-227 Easy to use and parallel Industry standard outline Designed and qualified for industrial level UL approved file E78996 Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 100 V 190 A 0.0065  Modules - MOSFET SOT-227 PRODUCT SUMMARY VDSS ID DC RDS(on) Type Package DESCRIPTION High current density power MOSFETs are paralleled into a compact, high power module providing the best combination of switching, ruggedized design, very low on-resistance and cost effectiveness. The isolated SOT-227 package is preferred for all commercial-industrial applications at power dissipation levels to approximately higher than 500 W. The low thermal resistance and easy connection to the SOT-227 package contribute to its universal acceptance throughout the industry. ABSOLUTE MAXIMUM RATINGS PARAMETER Continuous drain current at VGS 10 V Pulsed drain current Power dissipation Linear derating factor Gate to source voltage Single pulse avalanche energy Avalanche current Repetitive avalanche energy Peak diode recovery dV/dt Operating junction and storage temperature range Insulation withstand voltage (AC-RMS) Mounting torque VGS EAS (2) IAR (1) EAR (1) dV/dt (3) TJ, TStg VISO ...