RFN20NS6S

Data Sheet Super Fast Recovery Diode RFN20NS6S zSerise Standard Fast Recovery zDimensions(Unit : mm) zLand Size Figure(Unit : mm) zApplications General rectification RFN20 NS6S ձ zFeatures 1)Low switching loss 2)High current overload capacity LPDS zStructure zConstruction Silicon epitaxial planer type ROHM : LPDS JEITA : TO263S ձ Manufacture Date zTaping Dimensions(Unit : mm) zAbsolute Maximum Ratings(Tc=25°C) Parameter Repetitive peak reverse voltage Reverse voltage Average rectified foward current Forward current surge peak Junction temperature Storage temperature zElectrical Characteristics(Tj=25°C) Parameter Forward voltage Reverse current Reverse recovery time Thermal resistance Symbol VF IR trr Rth(j-c) Conditions IF=20A VR=600V IF=0.5A,IR=1A,Irr=0.25×IR Junction to case Min. Typ. 1.25 0.05 40 Max. 1.55 10 60 2.5 Unit V μA ns °C/W Symbol VRM VR Io IFSM Tj Tstg Conditions Duty0.5 Direct voltage 60Hz half sin wave , Resistive load Tc=47°C (*1) Limits 600 600 20 100 150 55 to 150 Unit V V A A °C °C 60Hz half sin wave , Non-repetitive at Tj=25°C (*1) 1-3pin common circuit WWWROHMCOM Ú2/(-#O,TD!LLRIGHTSRESERVED 1/4 2012.06 - Rev.A Free Datasheet http://www.datasheet4u.net/ RFN20NS6S 　 Data Sheet 100 100000 Tj=150°C 10000 Tj=125°C 10 Tj=150°C Tj=125°C 1 Tj=75°C REVERSE CURRENT:IR(nA) FORWARD CURRENT:IF(A) 1000 Tj=75°C 100 Tj=25°C 10 Tj=25°C 0.1 0 500 1000 1500 2000 2500 1 0 100 200 300 400 500 600 FORWARD VOLTAGE:VF(mV...