HGT1S3N60A4S

HGTD3N60A4S, HGT1S3N60A4S, HGTP3N60A4 Data Sheet January 2000 File Number 4825 600V, SMPS Series N-Channel IGBT The HGTD3N60A4S, HGT1S3N60A4S and the HGTP3N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies. Formerly Developmental Type TA49327. Features >100kHz Operation at 390V, 3A 200kHz Operation at 390V, 2.5A 600V Switching SOA Capability Typical Fall Time. . . . . . . . . . . . . . . . . 70ns at TJ = 125oC 12mJ EAS Capability Low Conduction Loss Temperature Compensating SABER Model www.intersil.com Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER HGTD3N60A4S HGT1S3N60A4S HGTP3N60A4 PACKAGE TO-252AA TO-263AB TO-220AB BRAND 3N60A4 Packaging JEDEC TO-252AA COLLECTOR 3N60A4 3N60A4 G E (FLANGE) NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-252AA or the TO-263AB in tape and reel, i.e. HGT1S3N60A4S9A JEDEC TO-263AB Symbol C G E G COLLECTOR (FLANGE) JEDEC TO-220AB E E C ...