HGT1S7N60B3DS

HGTP7N60B3D, HGT1S7N60B3DS Data Sheet January 2000 File Number 4413.2 14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode The HGTP7N60B3D and HGT1S7N60B3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC at rated current. The IGBT is developmental type TA49190. The diode used in anti-parallel with the IGBT is the RHRD660 (TA49057). The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly Developmental Type TA49191. Features 14A, 600V, TC = 25oC 600V Switching SOA Capability Typical Fall Time. . . . . . . . . . . . . . . . 120ns at TJ = 150oC Short Circuit Rating Low Conduction Loss Hyperfast Anti-Parallel Diode Packaging JEDEC TO-220AB (ALTERNATE VERSION) E COLLECTOR (FLANGE) C G Ordering Information PART NUMBER HGTP7N60B3D HGT1S7N60B3DS PACKAGE TO-220AB ALT TO-263AB BRAND JEDEC TO-263AB G7N60B3D G7N60B3D COLLECTOR (FLANGE) G E NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in tape and reel, i.e., HGT1S7N60B3DS9A. Symbol C G E INTERSIL CO...