HGT4E20N60A4DS

HGTG20N60A4D, HGT4E20N60A4DS Data Sheet APRIL 2002 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49339. The diode used in anti-parallel is the development type TA49372. These IGBT’s are ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. These devices have been optimized for high frequency switch mode power supplies. Formerly Developmental Type TA49341. Features >100kHz Operation At 390V, 20A 200kHz Operation At 390V, 12A 600V Switching SOA Capability Typical Fall Time . . . . . . . . . . . . . . . . .55ns at T J = 125 oC Low Conduction Loss Temperature Compensating SABER™ Model www.fairchildsemi.com Packaging JEDEC STYLE TO-247 E C G Ordering Information PART NUMBER HGTG20N60A4D HGT4E20N60A4DS PACKAGE TO-247 TO-268 BRAND 20N60A4D 20N60A4DS TO-268AA NOTE: When ordering, use the entire part number. Symbol C C G G E E FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430...