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HGTD3N60B3S Dataheets PDF



Part Number HGTD3N60B3S
Manufacturers Intersil Corporation
Logo Intersil Corporation
Description 7A/ 600V/ UFS Series N-Channel IGBTs
Datasheet HGTD3N60B3S DatasheetHGTD3N60B3S Datasheet (PDF)

HGTD3N60B3S, HGT1S3N60B3S, HGTP3N60B3 Data Sheet January 2000 File Number 4368.1 7A, 600V, UFS Series N-Channel IGBTs The HGTD3N60B3S, HGT1S3N60B3S and HGTP3N60B3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for man.

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