HGTD3N60C3S

S E M I C O N D U C T O R HGTD3N60C3, HGTD3N60C3S 6A, 600V, UFS Series N-Channel IGBTs Description The HGTD3N60C3 and HGTD3N60C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly developmental type TA49113. June 1997 Features 6A, 600V at TC = 25oC 600V Switching SOA Capability Typical Fall Time . . . . . . . . . . . . . . 130ns at TJ = 150oC Short Circuit Rating Low Conduction Loss Ordering Information PART NUMBER HGTD3N60C3 HGTD3N60C3S PACKAGE TO-251AA TO-252AA BRAND G3N60C G3N60C NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-252AA variant in Tape and Reel, i.e. HGTD3N60C3S9A. Symbol N-CHANNEL ENHANCEMENT MODE C G E Packaging JEDEC TO-251AA EMITTER COLLECTOR GATE COLLECTOR (FLANGE) GATE EMITTER COLLECTOR (FLANGE) JEDEC TO-252AA HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS: 4,364,073 4,587,713 4,641,162 4,794,432 4,860,080 4,417,385 4,598,461 4,644,637 4,801,986 4,883,767 4...