HGTD6N40E1S

HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, HGTD6N50E1S March 1997 6A, 400V and 500V N-Channel IGBTs Packages HGTD6N40E1, HGTD6N50E1 JEDEC TO-251AA EMITTER COLLECTOR GATE COLLECTOR (FLANGE) Features 6A, 400V and 500V VCE(ON): 2.5V Max. TFALL: 1.0µs Low On-State Voltage Fast Switching Speeds High Input Impedance Applications Power Supplies Motor Drives Protective Circuits HGTD6N40E1S, HGTD6N50E1S JEDEC TO-252AA COLLECTOR (FLANGE) GATE EMITTER Description The HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, and HGTD6N50E1S are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high voltage, low on-dissipation applications such as switching regulators and motor drivers. These types can be operated directly from low power integrated circuits. PACKAGING AVAILABILITY PART NUMBER HGTD6N40E1 HGTD6N50E1 HGTD6N40E1S HGTD6N50E1S PACKAGE TO-251AA TO-251AA TO-252AA TO-252AA BRAND G6N40E G6N50E G6N40E G6N50E E G Terminal Diagram N-CHANNEL ENHANCEMENT MODE C NOTE: When ordering, use the entire part number. Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified HGTD6N40E1 HGTD6N40E1S 400 400 ±20 7.5 6.0 60 0.48 -55 to +150 HGTD6N50E1 HGTD6N50E1S 500 500 ±20 7.5 6.0 60 0.48 -55 to +150 UNITS V V V A A W W/oC oC Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VCES Collector-Gate Voltage RGE = 1MΩ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VCGR Gat...