HGTD8P50G1S

HGTD8P50G1, HGTD8P50G1S March 1997 8A, 500V P-Channel IGBTs Package JEDEC TO-251AA EMITTER COLLECTOR GATE Features 8A, 500V 3.7V VCE(SAT) Typical Fall Time - 1800ns High Input Impedance TJ = +150oC (FLANGE) COLLECTOR Description The HGTD8P50G1 and the HGTD8P50G1S are P-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high voltage, low on-dissipation applications such as switching regulators and motor drives. This P- channel IGBT can be paired with N-Channel IGBTs to form a complementary power switch and it is ideal for half bridge circuit configurations. These types can be operated directly from low power integrated circuits. PACKAGING AVAILABILITY PART NUMBER HGTD8P50G1 HGTD8P50G1S PACKAGE TO-251AA TO-252AA BRAND G8P50G G8P50G G JEDEC TO-252AA (FLANGE) COLLECTOR GATE EMITTER Symbol C NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-252AA variant in the tape and reel, i.e., HGTD8P50G1S9A. The development type number for these devices is TA49015. E Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified HGTD8P50G1/G1S -500 10 -12 -8 -18 ±20 ±30 -3 -18 66 0.53 -40 to +150 +260 UNITS V V A A A V V A A W W/oC oC oC Collector-Emitter Breakdown Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES Emitter-Collector Breakdown Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVECS Collector Current Continuous At TC = +25oC. . . . . . ....