HGTG12N60C3D

Data Sheet HGTG12N60C3D December 2001 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG12N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49123. The diode used in anti parallel with the IGBT is the development type TA49061. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential. Formerly Developmental Type TA49117. Ordering Information PART NUMBER PACKAGE BRAND HGTG12N60C3D TO-247 G12N60C3D NOTE: When ordering, use the entire part number. Symbol C G E Features 24A, 600V at TC = 25oC Typical Fall Time . . . . . . . . . . . . . . . . 210ns at TJ = 150oC ...