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HGTG20N100D2 Dataheets PDF



Part Number HGTG20N100D2
Manufacturers Intersil Corporation
Logo Intersil Corporation
Description N-Channel IGBT
Datasheet HGTG20N100D2 DatasheetHGTG20N100D2 Datasheet (PDF)

HGTG20N100D2 May 1995 20A, 1000V N-Channel IGBT Package JEDEC STYLE TO-247 EMITTER COLLECTOR GATE Features • 34A, 1000V • Latch Free Operation • Typical Fall Time 520ns • High Input Impedance • Low Conduction Loss Description The HGTG20N100D2 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage.

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