HGTG20N120E2

Semiconductor HGTG20N120E2 34A, 1200V N-Channel IGBT Package JEDEC STYLE TO-247 EMITTER COLLECTOR GATE COLLECTOR (BOTTOM SIDE METAL) April 1995 Features 34A, 1200V Latch Free Operation Typical Fall Time - 780ns High Input Impedance Low Conduction Loss Description The HGTG20N120E2 is a MOS gated, high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25oC and +150oC. IGBTs are ideal for many high voltage switching applications operating at frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. The development type number for this device is TA49009. PACKAGING AVAILABILITY PART NUMBER HGTG20N120E2 PACKAGE TO-247 BRAND G20N120E2 E Terminal Diagram C G Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified Collector-Emitter Breakdown Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES Collector-Gate Breakdown Voltage RGE = 1MΩ. . . . . . . . . . . . . . . . . . . . . . . . . . . BVCGR Collector Current Continuous At TC = +25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 At TC = +90oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....