HGTG24N60D1

HGTG24N60D1 May 1995 24A, 600V N-Channel IGBT Package JEDEC STYLE TO-247 EMITTER COLLECTOR GATE COLLECTOR (BOTTOM SIDE METAL) Features 24A, 600V Latch Free Operation Typical Fall Time <500ns High Input Impedance Low Conduction Loss Description The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25oC and +150oC. IGBTs are ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. PACKAGING AVAILABILITY PART NUMBER HGTG24N60D1 PACKAGE TO-247 BRAND G24N60D1 E Terminal Diagram N-CHANNEL ENHANCEMENT MODE C G Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specific HGTG24N60D1 600 600 40 24 96 ±25 60A at 0.8 BVCES 125 1.0 -55 to +150 260 UNITS V V A A A V W W/oC oC oC Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES Collector-Gate Voltage RGE = 1MΩ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCGR Collector Current Continuous at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 at VGE = 15V at TC = +90oC . . . . . . . . . . ...