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HGTG30N60B3 Dataheets PDF



Part Number HGTG30N60B3
Manufacturers Intersil Corporation
Logo Intersil Corporation
Description N-Channel IGBT
Datasheet HGTG30N60B3 DatasheetHGTG30N60B3 Datasheet (PDF)

HGTG30N60B3 Data Sheet January 2000 File Number 4444.2 60A, 600V, UFS Series N-Channel IGBT The HGTG30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching applications operating at moderat.

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