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HGTG34N100E2 Dataheets PDF



Part Number HGTG34N100E2
Manufacturers Intersil Corporation
Logo Intersil Corporation
Description N-Channel IGBT
Datasheet HGTG34N100E2 DatasheetHGTG34N100E2 Datasheet (PDF)

HGTG34N100E2 April 1995 34A, 1000V N-Channel IGBT Package JEDEC STYLE TO-247 EMITTER COLLECTOR GATE Features • 34A, 1000V • Latch Free Operation • Typical Fall Time - 710ns • High Input Impedance • Low Conduction Loss COLLECTOR (BOTTOM SIDE METAL) Description The HGTG34N100E2 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transist.

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