K168

2SK168 Silicon N-Channel Junction FET Application VHF Amplifier, Mixer, Local oscillator Outline TO-92 (2) 1. Gate 2. Source 3. Drain 3 2 1 Free Datasheet http://www.datasheet4u.net/ 2SK168 Absolute Maximum Ratings (Ta = 25°C) Item Gate to drain voltage Gate to source voltage Gate current Drain current Channel power dissipation Channel temperature Storage temperature Symbol VGDO VGSS IG ID Pch Tch Tstg Ratings –30 –1 10 20 200 150 –55 to +150 Unit V V mA mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Gate to drain breakdown voltage Gate cutoff current Drain current Gate to source cutoff voltage Forward transfer admittance Input capacitance Reverse transfer capacitance Power gain Noise figure Note: D 4 to 8 Symbol V(BR)GDO I GSS I DSS* 1 Min –30 — 4 — 8 — — — — Typ — — — — 10 6.8 0.1 27 1.7 Max — –10 20 –3.0 — — — — — Unit V nA mA V mS pF pF dB dB Test conditions I G = –100 µA, IS = 0 VGS = –0.5 V, VDS = 0 VDS = 5 V, VGS = 0 VDS = 5 V, ID = 10 µA VDS = 5 V, VGS = 0, f = 1 kHz VDS = 5 V, VGS = 0, f = 1 MHz VDS = 5 V, VGS = 0, f = 1 MHz VDS = 5 V, VGS = 0, f = 100 MHz VDS = 5 V, VGS = 0, f = 100 MHz VGS(off) |yfs| Ciss Crss PG NF 1. The 2SK168 is grouped by I DSS as follows. E 6 to 12 F 10 to 20 2 Free Datasheet http://www.datasheet4u.net/ 2SK168 Maximum Channel Power Dissipation Curve Channel Power Dissipation Pch (mW) 300 Typical Output Characteristics (1) 10 VGS = 0 Drain Current ID (mA) 8 –0.2 V 6 –0.4 4 –0.6 2 –0.8 –1.0 0 30 40 10 20 Drain to Source...